[HN Gopher] First N-channel diamond field-effect transistor for ...
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First N-channel diamond field-effect transistor for CMOS integrated
circuits
Author : wglb
Score : 19 points
Date : 2024-03-16 03:10 UTC (2 days ago)
(HTM) web link (techxplore.com)
(TXT) w3m dump (techxplore.com)
| magicalhippo wrote:
| Full paper here[1].
|
| Hadn't heard of diamond CMOS technology before so did some brief
| digging. Here's[2] the preprint of the article they refer to for
| the P-type diamond FET. It uses boron nitride as the insulating
| layer and graphite for the gate.
|
| I also found this[3] paper discussing a P-type diamond FET using
| aluminium oxide as the insulating layer, which is also used for
| the N-type diamond FET.
|
| Some excerpts from the full article:
|
| _For high-frequency operation, compared with H-terminated
| transistors with a cutoff frequency of over GHz, the series
| resistance is still large for n-type diamond MOSFETs, which is
| over 10^9 O mm^-1 at room temperature. Thus, the operating speed
| was limited to the kilohertz range._
|
| _By optimizing the device geometries, such as the reduction of
| the drift region space and gate length, the operation frequency
| can exceed the megahertz range [...]_
|
| So seems it's still some significant hurdles to overcome to make
| it widely useful, but should be good enough for certain niche
| applications already.
|
| [1]:
| https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202306...
|
| [2]: https://arxiv.org/abs/2102.05982
|
| [3]:
| https://www.tandfonline.com/doi/full/10.1080/26941112.2022.2...
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(page generated 2024-03-18 23:00 UTC)