[HN Gopher] First N-channel diamond field-effect transistor for ...
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       First N-channel diamond field-effect transistor for CMOS integrated
       circuits
        
       Author : wglb
       Score  : 19 points
       Date   : 2024-03-16 03:10 UTC (2 days ago)
        
 (HTM) web link (techxplore.com)
 (TXT) w3m dump (techxplore.com)
        
       | magicalhippo wrote:
       | Full paper here[1].
       | 
       | Hadn't heard of diamond CMOS technology before so did some brief
       | digging. Here's[2] the preprint of the article they refer to for
       | the P-type diamond FET. It uses boron nitride as the insulating
       | layer and graphite for the gate.
       | 
       | I also found this[3] paper discussing a P-type diamond FET using
       | aluminium oxide as the insulating layer, which is also used for
       | the N-type diamond FET.
       | 
       | Some excerpts from the full article:
       | 
       |  _For high-frequency operation, compared with H-terminated
       | transistors with a cutoff frequency of over GHz, the series
       | resistance is still large for n-type diamond MOSFETs, which is
       | over 10^9 O mm^-1 at room temperature. Thus, the operating speed
       | was limited to the kilohertz range._
       | 
       |  _By optimizing the device geometries, such as the reduction of
       | the drift region space and gate length, the operation frequency
       | can exceed the megahertz range [...]_
       | 
       | So seems it's still some significant hurdles to overcome to make
       | it widely useful, but should be good enough for certain niche
       | applications already.
       | 
       | [1]:
       | https://onlinelibrary.wiley.com/doi/full/10.1002/advs.202306...
       | 
       | [2]: https://arxiv.org/abs/2102.05982
       | 
       | [3]:
       | https://www.tandfonline.com/doi/full/10.1080/26941112.2022.2...
        
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       (page generated 2024-03-18 23:00 UTC)