[HN Gopher] Micron's 232-layer NAND enables 2TB flash chips that...
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Micron's 232-layer NAND enables 2TB flash chips that deliver data
50% faster
Author : samizdis
Score : 54 points
Date : 2022-07-26 20:54 UTC (2 hours ago)
(HTM) web link (spectrum.ieee.org)
(TXT) w3m dump (spectrum.ieee.org)
| Robotbeat wrote:
| At what point will the wear resistance be so low from increasing
| the layers (and bits) per cell that flash becomes effectively
| write-once, read many (WORM)?
| hinkley wrote:
| Levels per cell and wear I understand. What's the link between
| circuit layer depth and wear?
| lazide wrote:
| Keep in mind, these are layers of cells, not multi-level cells.
| Each of the layers has an individual multi-level cell.
|
| That said, Samsung quad-level cells only have 1k write
| lifetime, so likely not far off.
| hinkley wrote:
| I love how someone said there's a septuple-level cell out
| there... but you have to immerse it in liquid nitrogen for it
| to work.
| __alexs wrote:
| PLC NAND is already on the way to commercial hardware.
| mritun wrote:
| Remember, even 1000 writes means roughly 3Y of full drive
| writes per day with the naive wear leveling and the most
| brutal write load. For most write loads the drives made of
| this kind of NAND can be easily warranted for 3Y.
| lazide wrote:
| Yeah, 1K is still in the range of reasonable (if the wear
| leveling isn't terrible), another order of magnitude
| decrease though and we're getting on the edge of not.
| Dylan16807 wrote:
| Increasing layers should cause roughly zero problems.
|
| As far as bits per cell, 4 already gives you very slow writes
| and not a lot of them. Let's say that maxes out at 5 or 6.
| [deleted]
| dale_glass wrote:
| There was a paper a while back that promised a healing process
| for flash:
|
| https://www.zdnet.com/article/self-healing-flash-for-infinit...
|
| I have no idea what happened to that though, because it sounded
| extremely promising.
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