[HN Gopher] Chasing After Carbon Nanotube FETs
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       Chasing After Carbon Nanotube FETs
        
       Author : lnyan
       Score  : 37 points
       Date   : 2021-12-29 12:09 UTC (1 days ago)
        
 (HTM) web link (semiengineering.com)
 (TXT) w3m dump (semiengineering.com)
        
       | simonebrunozzi wrote:
       | FET = field-effect transistors
        
       | trhway wrote:
       | >The big difference is the channel, which allows electrons to
       | flow from the source to the drain. In today's transistors, the
       | channel is based on silicon. In contrast, a carbon nanotube FET
       | makes use of a fixed number of tiny and parallel nanotubes for
       | the channels, each measuring 1nm in diameter. Leveraging the
       | properties of these materials, carbon nanotube transistors
       | exhibit high mobilities at low power.
       | 
       | vacuum channel is even better - 460GHz with existing technology
       | https://www.extremetech.com/extreme/185027-the-vacuum-tube-s...
        
         | smaddox wrote:
         | I actually think such vacuum transistors are the future of
         | digital electronics. I remember first seeing the research on
         | them when I was in grad school back in ~2014 or ~2015. The big
         | challenges I see are making a complementary version, to get
         | CMOS-like power savings, and mass producing them with
         | sufficient yield. If you can do both of those, it should be
         | possible to 3D stack them, which would put silicon transistors
         | to shame.
        
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       (page generated 2021-12-30 23:01 UTC)