SUBJECT: main
TITLE: Table of Contents
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
SUBTOPIC: SPICE:INTRODUCTION
SUBTOPIC: SPICE:CIRCUIT DESCRIPTION
SUBTOPIC: SPICE:CIRCUIT ELEMENTS AND MODELS
SUBTOPIC: SPICE:ANALYSES AND OUTPUT CONTROL
SUBTOPIC: SPICE:INTERACTIVE INTERPRETER
SUBTOPIC: SPICE:BIBLIOGRAPHY
SUBTOPIC: SPICE:APPENDIX A
SUBTOPIC: SPICE:APPENDIX B
SUBJECT: INTRODUCTION
TITLE: INTRODUCTION
TEXT: H
TEXT: H _1.  _I_N_T_R_O_D_U_C_T_I_O_N
TEXT: H
TEXT: H
TEXT: H      SPICE is a general-purpose circuit  simulation  program
TEXT: H for  nonlinear  dc,  nonlinear transient, and linear ac ana-
TEXT: H lyses.  Circuits may contain resistors,  capacitors,  induc-
TEXT: H tors,  mutual  inductors,  independent  voltage  and current
TEXT: H sources, four types of dependent sources, lossless and lossy
TEXT: H transmission lines (two separate implementations), switches,
TEXT: H uniform distributed RC lines, and the five most common  sem-
TEXT: H iconductor  devices:  diodes, BJTs, JFETs, MESFETs, and MOS-
TEXT: H FETs.
TEXT: H
TEXT: H      The SPICE3 version is based  directly  on  SPICE  2G.6.
TEXT: H While  SPICE3 is being developed to include new features, it
TEXT: H continues to support those  capabilities  and  models  which
TEXT: H remain in extensive use in the SPICE2 program.
TEXT: H
TEXT: H      SPICE has built-in models for  the  semiconductor  dev-
TEXT: H ices,  and  the  user  need specify only the pertinent model
TEXT: H parameter values.  The model for the BJT  is  based  on  the
TEXT: H integral-charge  model  of Gummel and Poon;  however, if the
TEXT: H Gummel- Poon parameters are not specified, the model reduces
TEXT: H to  the  simpler  Ebers-Moll model.  In either case, charge-
TEXT: H storage effects, ohmic resistances, and a  current-dependent
TEXT: H output  conductance may be included.  The diode model can be
TEXT: H used for either junction diodes or Schottky barrier  diodes.
TEXT: H The  JFET  model  is  based on the FET model of Shichman and
TEXT: H Hodges.   Six  MOSFET  models  are  implemented:   MOS1   is
TEXT: H described by a square-law I-V characteristic, MOS2 [1] is an
TEXT: H analytical model, while MOS3 [1] is a semi-empirical  model;
TEXT: H MOS6  [2]  is a simple analytic model accurate in the short-
TEXT: H channel region; MOS4 [3,  4]  and  MOS5  [5]  are  the  BSIM
TEXT: H (Berkeley Short-channel IGFET Model) and BSIM2.  MOS2, MOS3,
TEXT: H and MOS4 include second-order effects such as channel-length
TEXT: H modulation,   subthreshold   conduction,  scattering-limited
TEXT: H velocity  saturation,  small-size   effects,   and   charge-
TEXT: H controlled capacitances.
SUBTOPIC: SPICE:TYPES OF ANALYSIS
SUBTOPIC: SPICE:ANALYSIS AT DIFFERENT TEMPERATURES
SUBTOPIC: SPICE:CONVERGENCE

SUBJECT: TYPES OF ANALYSIS
TITLE: TYPES OF ANALYSIS
TEXT: H
TEXT: H _1._1.  _T_Y_P_E_S _O_F _A_N_A_L_Y_S_I_S
TEXT: H
SUBTOPIC: SPICE:DC Analysis
SUBTOPIC: SPICE:AC SmallSignal Analysis
SUBTOPIC: SPICE:Transient Analysis
SUBTOPIC: SPICE:PoleZero Analysis
SUBTOPIC: SPICE:SmallSignal Distortion Analysis
SUBTOPIC: SPICE:Sensitivity Analysis
SUBTOPIC: SPICE:Noise Analysis

SUBJECT: DC Analysis
TITLE: DC Analysis
TEXT: H
TEXT: H _1._1._1.  _D_C _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The dc analysis portion  of  SPICE  determines  the  dc
TEXT: H operating  point  of  the circuit with inductors shorted and
TEXT: H capacitors opened.  The dc analysis options are specified on
TEXT: H the  .DC,  .TF,  and  .OP  control  lines.  A dc analysis is
TEXT: H automatically performed prior to  a  transient  analysis  to
TEXT: H determine  the transient initial conditions, and prior to an
TEXT: H ac  small-signal  analysis  to  determine  the   linearized,
TEXT: H small-signal  models  for  nonlinear devices.  If requested,
TEXT: H the dc small-signal value of a transfer function  (ratio  of
TEXT: H output variable to input source), input resistance, and out-
TEXT: H put resistance is also computed as a part of  the  dc  solu-
TEXT: H tion.   The  dc  analysis  can  also  be used to generate dc
TEXT: H transfer curves:  a specified independent voltage or current
TEXT: H source  is  stepped  over  a user-specified range and the dc
TEXT: H output variables  are  stored  for  each  sequential  source
TEXT: H value.
TEXT: H



SUBJECT: PoleZero Analysis
TITLE: Pole-Zero Analysis
TEXT: H
TEXT: H _1._1._4.  _P_o_l_e-_Z_e_r_o _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The pole-zero analysis portion of  SPICE  computes  the
TEXT: H poles and/or zeros in the small-signal ac transfer function.
TEXT: H The program first computes the dc operating point  and  then
TEXT: H determines  the  linearized, small-signal models for all the
TEXT: H nonlinear devices in the circuit.  This circuit is then used
TEXT: H to find the poles and zeros of the transfer function.
TEXT: H
TEXT: H      Two types of transfer functions are allowed  :  one  of
TEXT: H the  form  (output voltage)/(input voltage) and the other of
TEXT: H the form (output voltage)/(input current).  These two  types
TEXT: H of  transfer  functions cover all the cases and one can find
TEXT: H the poles/zeros of functions like input/output impedance and
TEXT: H voltage  gain.   The input and output ports are specified as
TEXT: H two pairs of nodes.
TEXT: H
TEXT: H      The pole-zero analysis works  with  resistors,  capaci-
TEXT: H tors,   inductors,  linear-controlled  sources,  independent
TEXT: H sources, BJTs,  MOSFETs,  JFETs  and  diodes.   Transmission
TEXT: H lines are not supported.
TEXT: H
TEXT: H      The method used in the analysis is a sub-optimal numer-
TEXT: H ical  search.  For large circuits it may take a considerable
TEXT: H time or fail to find all poles and  zeros.   For  some  cir-
TEXT: H cuits,  the  method  becomes  "lost"  and finds an excessive
TEXT: H number of poles or zeros.
TEXT: H

SUBJECT: SmallSignal Distortion Analysis
TITLE: Small-Signal Distortion Analysis
TEXT: H
TEXT: H _1._1._5.  _S_m_a_l_l-_S_i_g_n_a_l _D_i_s_t_o_r_t_i_o_n _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      The  distortion  analysis  portion  of  SPICE  computes
TEXT: H steady-state harmonic and intermodulation products for small
TEXT: H input signal magnitudes.  If signals of a  single  frequency
TEXT: H are  specified  as  the  input  to  the circuit, the complex
TEXT: H values of the second and third harmonics are  determined  at
TEXT: H every  point  in  the  circuit.  If there are signals of two
TEXT: H frequencies input to the circuit, the analysis finds out the
TEXT: H complex  values  of  the  circuit  variables  at the sum and
TEXT: H difference of the input frequencies, and at  the  difference
TEXT: H of  the  smaller  frequency  from the second harmonic of the
TEXT: H larger frequency.
TEXT: H
TEXT: H      Distortion analysis is supported for the following non-
TEXT: H linear  devices: diodes (DIO), BJT, JFET, MOSFETs (levels 1,
TEXT: H 2, 3, 4/BSIM1, 5/BSIM2, and 6) and MESFETS.  All linear dev-
TEXT: H ices are automatically supported by distortion analysis.  If
TEXT: H there are switches present in the circuit, the analysis con-
TEXT: H tinues  to  be  accurate provided the switches do not change
TEXT: H state under the small excitations used for distortion calcu-
TEXT: H lations.
TEXT: H

SUBJECT: Sensitivity Analysis
TITLE: Sensitivity Analysis
TEXT: H
TEXT: H _1._1._6.  _S_e_n_s_i_t_i_v_i_t_y _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H
TEXT: H      Spice3 will calculate  either  the  DC  operating-point
TEXT: H sensitivity  or the AC small-signal sensitivity of an output
TEXT: H variable with respect to all  circuit  variables,  including
TEXT: H model  parameters.   Spice  calculates  the difference in an
TEXT: H output variable (either a node voltage or a branch  current)
TEXT: H by  perturbing  each parameter of each device independently.
TEXT: H Since the method is a numerical approximation,  the  results
TEXT: H may  demonstrate  second  order  affects in highly sensitive
TEXT: H parameters, or may fail to show very low but non-zero sensi-
TEXT: H tivity.   Further, since each variable is perturb by a small
TEXT: H fraction of its value, zero-valued parameters are not analy-
TEXT: H ized  (this  has  the  benefit of reducing what is usually a
TEXT: H very large amount of data).
TEXT: H

SUBJECT: Noise Analysis


SUBJECT: CIRCUIT DESCRIPTION
TITLE: CIRCUIT DESCRIPTION
TEXT: H
TEXT: H _2.  _C_I_R_C_U_I_T _D_E_S_C_R_I_P_T_I_O_N
SUBTOPIC: SPICE:GENERAL STRUCTURE AND CONVENTIONS
SUBTOPIC: SPICE:TITLE LINE COMMENT LINES AND .END LINE
SUBTOPIC: SPICE:DEVICE MODELS
SUBTOPIC: SPICE:SUBCIRCUITS
SUBTOPIC: SPICE:COMBINING FILES

SUBJECT: GENERAL STRUCTURE AND CONVENTIONS
TITLE: GENERAL STRUCTURE AND CONVENTIONS
TEXT: H
TEXT: H _2._1.  _G_E_N_E_R_A_L _S_T_R_U_C_T_U_R_E _A_N_D _C_O_N_V_E_N_T_I_O_N_S
TEXT: H
TEXT: H
TEXT: H      The circuit to be analyzed is described to SPICE  by  a
TEXT: H set  of element lines, which define the circuit topology and
TEXT: H element values, and a set of control lines, which define the
TEXT: H model  parameters  and  the run controls.  The first line in
TEXT: H the input file must be the title, and the last line must  be
TEXT: H ".END".   The  order  of  the  remaining  lines is arbitrary
TEXT: H (except, of course, that continuation lines must immediately
TEXT: H follow the line being continued).
TEXT: H
TEXT: H      Each element in the circuit is specified by an  element
TEXT: H line  that  contains  the element name, the circuit nodes to
TEXT: H which the element is connected, and the values of the param-
TEXT: H eters  that  determine the electrical characteristics of the
TEXT: H element.  The first letter of the element name specifies the
TEXT: H element  type.   The  format  for the SPICE element types is
TEXT: H given in what follows.  The strings  XXXXXXX,  YYYYYYY,  and
TEXT: H ZZZZZZZ denote arbitrary alphanumeric strings.  For example,
TEXT: H a resistor name must begin with the letter R and can contain
TEXT: H one  or  more  characters.   Hence,  R,  R1,  RSE, ROUT, and
TEXT: H R3AC2ZY are valid resistor names.  Details of each  type  of
TEXT: H device are supplied in a following section.
TEXT: H
TEXT: H      Fields on a line are separated by one or more blanks, a
TEXT: H comma,  an equal ('=') sign, or a left or right parenthesis;
TEXT: H extra spaces are ignored.  A line may be continued by enter-
TEXT: H ing  a  '+'  (plus) in column 1 of the following line; SPICE
TEXT: H continues reading beginning with column 2.
TEXT: H
TEXT: H      A name field must begin with a letter (A through Z) and
TEXT: H cannot contain any delimiters.
TEXT: H
TEXT: H
TEXT: H      A number field may be an integer  field  (12,  -44),  a
TEXT: H floating  point field (3.14159), either an integer or float-
TEXT: H ing point number followed by  an  integer  exponent  (1e-14,
TEXT: H 2.65e3),  or  either  an  integer or a floating point number
TEXT: H followed by one of the following scale factors:
TEXT: H
TEXT: H       12         9                    6         3               -6
TEXT: H T = 10     G = 10             Meg = 10    K = 10      mil = 25.4
TEXT: H       -3                 -6         -9          -12         -15
TEXT: H m = 10     u (or  M) = 10     n = 10      p = 10      f = 10
TEXT: H
TEXT: H
TEXT: H
TEXT: H Letters immediately following a number that  are  not  scale
TEXT: H factors  are  ignored,  and  letters immediately following a
TEXT: H scale factor are ignored.  Hence, 10, 10V, 10Volts, and 10Hz
TEXT: H all  represent  the  same number, and M, MA, MSec, and MMhos
TEXT: H all represent  the  same  scale  factor.   Note  that  1000,
TEXT: H 1000.0,  1000Hz,  1e3, 1.0e3, 1KHz, and 1K all represent the
TEXT: H same number.
TEXT: H
TEXT: H      Nodes names may be arbitrary  character  strings.   The
TEXT: H datum  (ground) node must be named '0'.  Note the difference
TEXT: H in SPICE3 where the nodes are treated as  character  strings
TEXT: H and not evaluated as numbers, thus '0' and '00' are distinct
TEXT: H nodes in SPICE3 but not in SPICE2.  The circuit cannot  con-
TEXT: H tain  a  loop of voltage sources and/or inductors and cannot
TEXT: H contain a cut-set  of  current  sources  and/or  capacitors.
TEXT: H Each  node  in  the  circuit  must have a dc path to ground.
TEXT: H Every node must have at least  two  connections  except  for
TEXT: H transmission line nodes (to permit unterminated transmission
TEXT: H lines) and MOSFET substrate nodes (which have  two  internal
TEXT: H connections anyway).
TEXT: H

SUBJECT: DEVICE MODELS
TITLE: DEVICE MODELS
TEXT: H
TEXT: H _2._3.  _D_E_V_I_C_E _M_O_D_E_L_S
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .MODEL MNAME TYPE(PNAME1=PVAL1 PNAME2=PVAL2 ... )
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .MODEL MOD1 NPN (BF=50 IS=1E-13 VBF=50)
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Most simple circuit elements typically require  only  a
TEXT: H few  parameter values.  However, some devices (semiconductor
TEXT: H devices in particular) that are included  in  SPICE  require
TEXT: H many parameter values.  Often, many devices in a circuit are
TEXT: H defined by the same set of  device  model  parameters.   For
TEXT: H these  reasons,  a set of device model parameters is defined
TEXT: H on a separate .MODEL line and assigned a unique model  name.
TEXT: H The  device  element  lines in SPICE then refer to the model
TEXT: H name.
TEXT: H
TEXT: H      For these more complex device types, each  device  ele-
TEXT: H ment  line  contains the device name, the nodes to which the
TEXT: H device is connected, and the device model  name.   In  addi-
TEXT: H tion,  other  optional  parameters may be specified for some
TEXT: H devices:  geometric factors and an  initial  condition  (see
TEXT: H the following section on Transistors and Diodes for more de-
TEXT: H tails).
TEXT: H
TEXT: H      MNAME in the above is the model name, and type  is  one
TEXT: H of the following fifteen types:
TEXT: H
TEXT: H             R      Semiconductor resistor model
TEXT: H             C      Semiconductor capacitor model
TEXT: H             SW     Voltage controlled switch
TEXT: H             CSW    Current controlled switch
TEXT: H             URC    Uniform distributed RC model
TEXT: H             LTRA   Lossy transmission line model
TEXT: H             D      Diode model
TEXT: H             NPN    NPN BJT model
TEXT: H             PNP    PNP BJT model
TEXT: H             NJF    N-channel JFET model
TEXT: H             PJF    P-channel JFET model
TEXT: H             NMOS   N-channel MOSFET model
TEXT: H             PMOS   P-channel MOSFET model
TEXT: H             NMF    N-channel MESFET model
TEXT: H             PMF    P-channel MESFET model
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Parameter values are defined by appending the parameter
TEXT: H name  followed  by  an  equal  sign and the parameter value.
TEXT: H Model parameters that are not given a value are assigned the
TEXT: H default  values  given  below  for each model type.  Models,
TEXT: H model parameters, and default values are listed in the  next
TEXT: H section along with the description of device element lines.
TEXT: H

SUBJECT: SUBCIRCUITS
TITLE: SUBCIRCUITS
TEXT: H
TEXT: H _2._4.  _S_U_B_C_I_R_C_U_I_T_S
TEXT: H
TEXT: H
TEXT: H      A subcircuit that consists of  SPICE  elements  can  be
TEXT: H defined  and  referenced  in  a  fashion  similar  to device
TEXT: H models.  The subcircuit is defined in the input  file  by  a
TEXT: H grouping  of  element lines;  the program then automatically
TEXT: H inserts the group of elements  wherever  the  subcircuit  is
TEXT: H referenced.   There is no limit on the size or complexity of
TEXT: H subcircuits, and subcircuits may contain other  subcircuits.
TEXT: H An example of subcircuit usage is given in Appendix A.
TEXT: H
TEXT: H
SUBTOPIC: SPICE:.SUBCKT Line
SUBTOPIC: SPICE:.ENDS Line
SUBTOPIC: SPICE:Subcircuit Calls

SUBJECT: .SUBCKT Line
TITLE: .SUBCKT Line
TEXT: H
TEXT: H _2._4._1.  ._S_U_B_C_K_T _L_i_n_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .SUBCKT subnam N1 <N2 N3 ...>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .SUBCKT OPAMP 1 2 3 4
TEXT: H
TEXT: H
TEXT: H
TEXT: H      A circuit definition is  begun  with  a  .SUBCKT  line.
TEXT: H SUBNAM  is  the  subcircuit  name,  and  N1, N2, ... are the
TEXT: H external nodes, which cannot be zero.  The group of  element
TEXT: H lines  which  immediately follow the .SUBCKT line define the
TEXT: H subcircuit.  The last line in a subcircuit definition is the
TEXT: H .ENDS line (see below).  Control lines may not appear within
TEXT: H a subcircuit definition;   however,  subcircuit  definitions
TEXT: H may contain anything else, including other subcircuit defin-
TEXT: H itions, device models, and  subcircuit  calls  (see  below).
TEXT: H Note  that  any  device  models  or  subcircuit  definitions
TEXT: H included as part of a  subcircuit  definition  are  strictly
TEXT: H local  (i.e., such models and definitions are not known out-
TEXT: H side the subcircuit definition).  Also,  any  element  nodes
TEXT: H not  included  on  the .SUBCKT line are strictly local, with
TEXT: H the exception of 0 (ground) which is always global.
TEXT: H
TEXT: H

SUBJECT: .ENDS Line
TITLE: .ENDS Line
TEXT: H
TEXT: H _2._4._2.  ._E_N_D_S _L_i_n_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .ENDS <SUBNAM>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .ENDS OPAMP
TEXT: H
TEXT: H
TEXT: H      The "Ends" line must be the last one for  any  sub-
TEXT: H circuit  definition.   The subcircuit name, if included,
TEXT: H indicates which subcircuit definition is being terminat-
TEXT: H ed;   if omitted, all subcircuits being defined are ter-
TEXT: H minated.  The name is needed only when nested subcircuit
TEXT: H definitions are being made.
TEXT: H
TEXT: H
TEXT: H

SUBJECT: Subcircuit Calls
TITLE: Subcircuit Calls
TEXT: H
TEXT: H _2._4._3.  _S_u_b_c_i_r_c_u_i_t _C_a_l_l_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     XYYYYYYY N1 <N2 N3 ...> SUBNAM
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     X1 2 4 17 3 1 MULTI
TEXT: H
TEXT: H
TEXT: H      Subcircuits  are  used  in  SPICE   by   specifying
TEXT: H pseudo-elements beginning with the letter X, followed by
TEXT: H the circuit nodes to be used in  expanding  the  subcir-
TEXT: H cuit.
TEXT: H
TEXT: H

SUBJECT: COMBINING FILES
TITLE: COMBINING FILES: .INCLUDE LINES
TEXT: H
TEXT: H _2._5.  _C_O_M_B_I_N_I_N_G _F_I_L_E_S: ._I_N_C_L_U_D_E _L_I_N_E_S
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .INCLUDE _f_i_l_e_n_a_m_e
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .INCLUDE /users/spice/common/wattmeter.cir
TEXT: H
TEXT: H
TEXT: H      Frequently, portions of circuit  descriptions  will  be
TEXT: H reused  in  several  input  files,  particularly with common
TEXT: H models and  subcircuits.   In  any  spice  input  file,  the
TEXT: H ".include"  line  may  be used to copy some other file as if
TEXT: H that second file appeared in place of the ".include" line in
TEXT: H the original file.  There is no restriction on the file name
TEXT: H imposed by spice beyond those imposed by the local operating
TEXT: H system.

SUBJECT: CIRCUIT ELEMENTS AND MODELS
TITLE: CIRCUIT ELEMENTS AND MODELS
TEXT: H
TEXT: H _3.  _C_I_R_C_U_I_T _E_L_E_M_E_N_T_S _A_N_D _M_O_D_E_L_S
TEXT: H
TEXT: H
TEXT: H      Data  fields  that  are  enclosed  in   less-than   and
TEXT: H greater-than  signs  ('<  >')  are  optional.  All indicated
TEXT: H punctuation (parentheses, equal signs, etc.) is optional but
TEXT: H indicate  the  presence  of  any delimiter.  Further, future
TEXT: H implementations may require the punctuation  as  stated.   A
TEXT: H consistent  style  adhering  to  the  punctuation shown here
TEXT: H makes the input  easier  to  understand.   With  respect  to
TEXT: H branch voltages and currents, SPICE uniformly uses the asso-
TEXT: H ciated reference convention (current flows in the  direction
TEXT: H of voltage drop).
SUBTOPIC: SPICE:ELEMENTARY DEVICES
SUBTOPIC: SPICE:VOLTAGE AND CURRENT SOURCES
SUBTOPIC: SPICE:TRANSMISSION LINES
SUBTOPIC: SPICE:TRANSISTORS AND DIODES

SUBJECT: ELEMENTARY DEVICES
TITLE: ELEMENTARY DEVICES
TEXT: H
TEXT: H _3._1.  _E_L_E_M_E_N_T_A_R_Y _D_E_V_I_C_E_S
TEXT: H
SUBTOPIC: SPICE:Resistors
SUBTOPIC: SPICE:Semiconductor Resistors
SUBTOPIC: SPICE:Semiconductor Resistor Model 
SUBTOPIC: SPICE:Capacitors
SUBTOPIC: SPICE:Semiconductor Capacitors
SUBTOPIC: SPICE:Semiconductor Capacitor Model 
SUBTOPIC: SPICE:Inductors
SUBTOPIC: SPICE:Coupled Inductors
SUBTOPIC: SPICE:Switches
SUBTOPIC: SPICE:Switch Model 


SUBJECT: Semiconductor Resistors
TITLE: Semiconductor Resistors
TEXT: H
TEXT: H _3._1._2.  _S_e_m_i_c_o_n_d_u_c_t_o_r _R_e_s_i_s_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     RXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <TEMP=T>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     RLOAD 2 10 10K
TEXT: H     RMOD 3 7 RMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H      This is the more general form of the resistor presented
TEXT: H in  section  6.1,  and  allows  the  modeling of temperature
TEXT: H effects and for the calculation  of  the  actual  resistance
TEXT: H value from strictly geometric information and the specifica-
TEXT: H tions of the process.  If VALUE is specified,  it  overrides
TEXT: H the  geometric  information  and defines the resistance.  If
TEXT: H MNAME is specified, then the resistance  may  be  calculated
TEXT: H from  the  process  information  in  the model MNAME and the
TEXT: H given LENGTH and WIDTH.  If VALUE  is  not  specified,  then
TEXT: H MNAME  and LENGTH must be specified.  If WIDTH is not speci-
TEXT: H fied, then it is taken from the default width given  in  the
TEXT: H model.   The  (optional)  TEMP  value  is the temperature at
TEXT: H which this device is to operate, and overrides the  tempera-
TEXT: H ture specification on the .OPTION control line.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Resistor Model 
TITLE: Semiconductor Resistor Model (R)
TEXT: H
TEXT: H _3._1._3.  _S_e_m_i_c_o_n_d_u_c_t_o_r _R_e_s_i_s_t_o_r _M_o_d_e_l (_R)
TEXT: H
TEXT: H
TEXT: H      The resistor model consists of  process-related  device
TEXT: H data  that  allow  the  resistance  to  be  calculated  from
TEXT: H geometric information and to be corrected  for  temperature.
TEXT: H The parameters available are:
TEXT: H
TEXT: H name     parameter                           units    default   example
TEXT: H
TEXT: H                                                o
TEXT: H TC1      first order temperature coeff.      Z/ C     0.0       -
TEXT: H                                                o 2
TEXT: H TC2      second order temperature coeff.     Z/ C     0.0       -
TEXT: H RSH      sheet resistance                    Z/[]     -         50
TEXT: H DEFW     default width                       meters   1e-6      2e-6
TEXT: H NARROW   narrowing due to side etching       meters   0.0       1e-7
TEXT: H                                              o
TEXT: H TNOM     parameter measurement temperature    C       27        50
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The sheet resistance is used with the narrowing parame-
TEXT: H ter  and  L  and W from the resistor device to determine the
TEXT: H nominal resistance by the formula
TEXT: H
TEXT: H                              L - NARROW
TEXT: H                      R = RSH ----------
TEXT: H                              W - NARROW
TEXT: H
TEXT: H DEFW is used to supply a default value for W if one  is  not
TEXT: H specified  for the device.  If either RSH or L is not speci-
TEXT: H fied, then the standard default resistance value of 1k Z  is
TEXT: H used.  TNOM is used to override the circuit-wide value given
TEXT: H on the .OPTIONS control line where the  parameters  of  this
TEXT: H model  have been measured at a different temperature.  After
TEXT: H the nominal resistance is calculated,  it  is  adjusted  for
TEXT: H temperature by the formula:
TEXT: H
TEXT: H                                                   2
TEXT: H        R(T) = R(T ) [1 + TC1 (T - T ) + TC2 (T-T ) ]
TEXT: H                  0                 0            0
TEXT: H
TEXT: H
TEXT: H



SUBJECT: Semiconductor Capacitors
TITLE: Semiconductor Capacitors
TEXT: H
TEXT: H _3._1._5.  _S_e_m_i_c_o_n_d_u_c_t_o_r _C_a_p_a_c_i_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     CXXXXXXX N1 N2 <VALUE> <MNAME> <L=LENGTH> <W=WIDTH> <IC=VAL>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     CLOAD 2 10 10P
TEXT: H     CMOD 3 7 CMODEL L=10u W=1u
TEXT: H
TEXT: H
TEXT: H
TEXT: H      This  is  the  more  general  form  of  the   Capacitor
TEXT: H presented  in section 6.2, and allows for the calculation of
TEXT: H the actual capacitance value from strictly geometric  infor-
TEXT: H mation  and  the specifications of the process.  If VALUE is
TEXT: H specified, it defines the capacitance.  If MNAME  is  speci-
TEXT: H fied,  then  the  capacitance is calculated from the process
TEXT: H information in the model MNAME  and  the  given  LENGTH  and
TEXT: H WIDTH.   If  VALUE  is  not specified, then MNAME and LENGTH
TEXT: H must be specified.  If WIDTH is not specified,  then  it  is
TEXT: H taken  from  the  default  width given in the model.  Either
TEXT: H VALUE or MNAME, LENGTH, and WIDTH may be specified, but  not
TEXT: H both sets.
TEXT: H
TEXT: H

SUBJECT: Semiconductor Capacitor Model 
TITLE: Semiconductor Capacitor Model (C)
TEXT: H
TEXT: H _3._1._6.  _S_e_m_i_c_o_n_d_u_c_t_o_r _C_a_p_a_c_i_t_o_r _M_o_d_e_l (_C)
TEXT: H
TEXT: H
TEXT: H      The capacitor model contains process  information  that
TEXT: H may  be  used  to  compute  the  capacitance  from  strictly
TEXT: H geometric information.
TEXT: H
TEXT: H
TEXT: H
TEXT: H name     parameter                       units       default   example
TEXT: H
TEXT: H                                                  2
TEXT: H CJ       junction bottom capacitance     F/meters    -         5e-5
TEXT: H CJSW     junction sidewall capacitance   F/meters    -         2e-11
TEXT: H DEFW     default device width            meters      1e-6      2e-6
TEXT: H NARROW   narrowing due to side etching   meters      0.0       1e-7
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The capacitor has a capacitance computed as
TEXT: H
TEXT: H CAP = CJ (LENGTH - NARROW) (WIDTH - NARROW) + 2 CJSW (LENGTH + WIDTH - 2 NARROW)
TEXT: H
TEXT: H



o


SUBJECT: ANALYSES AND OUTPUT CONTROL
TITLE: ANALYSES AND OUTPUT CONTROL
TEXT: H
TEXT: H _4.  _A_N_A_L_Y_S_E_S _A_N_D _O_U_T_P_U_T _C_O_N_T_R_O_L
TEXT: H
TEXT: H
TEXT: H      The following command lines are for specifying analyses
TEXT: H or plots within the circuit description file.  Parallel com-
TEXT: H mands exist in the interactive command interpreter (detailed
TEXT: H in  the  following  section).  Specifying analyses and plots
TEXT: H (or tables) in the input file  is  useful  for  batch  runs.
TEXT: H Batch  mode is entered when either the -b option is given or
TEXT: H when the default input source is redirected from a file.  In
TEXT: H batch  mode,  the analyses specified by the control lines in
TEXT: H the input file (e.g. ".ac", ".tran", etc.)  are  immediately
TEXT: H executed (unless ".control" lines exists; see the section on
TEXT: H the interactive command interpretor).   If  the  -r  _r_a_w_f_i_l_e
TEXT: H option  is  given  then  all  data generated is written to a
TEXT: H Spice3 rawfile.  The rawfile  may  be  read  by  either  the
TEXT: H interactive  mode  of  Spice3 or by nutmeg; see the previous
TEXT: H section for details.  In this  case,  the  .SAVE  line  (see
TEXT: H below)  may  be  used to record the value of internal device
TEXT: H variables (see Appendix B).
TEXT: H
TEXT: H      If a rawfile is not specified, then  output  plots  (in
TEXT: H "line-printer"  form) and tables can be printed according to
TEXT: H the .PRINT, .PLOT, and .FOUR control lines, described  next.
TEXT: H .PLOT,  .PRINT,  and .FOUR lines are meant for compatibility
TEXT: H with Spice2.
TEXT: H
SUBTOPIC: SPICE:SIMULATOR VARIABLES 
SUBTOPIC: SPICE:INITIAL CONDITIONS
SUBTOPIC: SPICE:ANALYSES
SUBTOPIC: SPICE:BATCH OUTPUT


SUBJECT: INITIAL CONDITIONS
TITLE: INITIAL CONDITIONS
TEXT: H
TEXT: H _4._2.  _I_N_I_T_I_A_L _C_O_N_D_I_T_I_O_N_S
TEXT: H
SUBTOPIC: SPICE:.NODESET
SUBTOPIC: SPICE:.IC

SUBJECT: .NODESET
TITLE: .NODESET:  Specify Initial Node Voltage Guesses
TEXT: H
TEXT: H _4._2._1.  ._N_O_D_E_S_E_T:  _S_p_e_c_i_f_y _I_n_i_t_i_a_l _N_o_d_e _V_o_l_t_a_g_e _G_u_e_s_s_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .NODESET V(NODNUM)=VAL V(NODNUM)=VAL ...
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .NODESET V(12)=4.5 V(4)=2.23
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The Nodeset line helps the program find the dc or  ini-
TEXT: H tial  transient  solution  by making a preliminary pass with
TEXT: H the specified nodes held to the given  voltages.   The  res-
TEXT: H triction is then released and the iteration continues to the
TEXT: H true solution.  The .NODESET line may be necessary for  con-
TEXT: H vergence on bistable or a-stable circuits.  In general, this
TEXT: H line should not be necessary.
TEXT: H
TEXT: H

SUBJECT: .IC
TITLE: .IC:  Set Initial Conditions
TEXT: H
TEXT: H _4._2._2.  ._I_C:  _S_e_t _I_n_i_t_i_a_l _C_o_n_d_i_t_i_o_n_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .IC V(NODNUM)=VAL V(NODNUM)=VAL ...
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .IC V(11)=5 V(4)=-5 V(2)=2.2
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The IC line is for  setting  transient  initial  condi-
TEXT: H tions.   It  has two different interpretations, depending on
TEXT: H whether the UIC parameter is specified on the .TRAN  control
TEXT: H line.   Also,  one  should  not  confuse  this line with the
TEXT: H .NODESET line.  The .NODESET line is only to help dc conver-
TEXT: H gence,  and  does not affect final bias solution (except for
TEXT: H multi-stable circuits).  The  two  interpretations  of  this
TEXT: H line are as follows:
TEXT: H
TEXT: H  1.  When the UIC parameter is specified on the .TRAN  line,
TEXT: H then the node voltages specified on the .IC control line are
TEXT: H used to compute the capacitor, diode, BJT, JFET, and  MOSFET
TEXT: H initial  conditions.   This  is equivalent to specifying the
TEXT: H IC=... parameter on each device line, but is much more  con-
TEXT: H venient.   The  IC=...  parameter can still be specified and
TEXT: H takes precedence over the .IC  values.   Since  no  dc  bias
TEXT: H (initial  transient)  solution  is computed before the tran-
TEXT: H sient analysis, one should  take  care  to  specify  all  dc
TEXT: H source  voltages  on  the .IC control line if they are to be
TEXT: H used to compute device initial conditions.
TEXT: H
TEXT: H  2.  When the UIC parameter is not specified  on  the  .TRAN
TEXT: H control  line,  the  dc bias (initial transient) solution is
TEXT: H computed before the transient analysis.  In this  case,  the
TEXT: H node voltages specified on the .IC control line is forced to
TEXT: H the desired initial values during the bias solution.  During
TEXT: H transient analysis, the constraint on these node voltages is
TEXT: H removed.  This is the preferred method since it allows SPICE
TEXT: H to compute a consistent dc solution.
TEXT: H

SUBJECT: ANALYSES
TITLE: ANALYSES
TEXT: H
TEXT: H _4._3.  _A_N_A_L_Y_S_E_S
TEXT: H
TEXT: H
SUBTOPIC: SPICE:.AC
SUBTOPIC: SPICE:.DC
SUBTOPIC: SPICE:.DISTO
SUBTOPIC: SPICE:.NOISE
SUBTOPIC: SPICE:.OP
SUBTOPIC: SPICE:.PZ
SUBTOPIC: SPICE:.SENS
SUBTOPIC: SPICE:.TF
SUBTOPIC: SPICE:.TRAN


SUBJECT: .DISTO
TITLE: .DISTO:  Distortion Analysis
TEXT: H
TEXT: H _4._3._3.  ._D_I_S_T_O:  _D_i_s_t_o_r_t_i_o_n _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .DISTO DEC ND FSTART FSTOP <F2OVERF1>
TEXT: H     .DISTO OCT NO FSTART FSTOP <F2OVERF1>
TEXT: H     .DISTO LIN NP FSTART FSTOP <F2OVERF1>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .DISTO DEC 10 1kHz 100Mhz
TEXT: H     .DISTO DEC 10 1kHz 100Mhz 0.9
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The Disto line does a small-signal distortion  analysis
TEXT: H of   the   circuit.   A  multi-dimensional  Volterra  series
TEXT: H analysis is done using multi-dimensional  Taylor  series  to
TEXT: H represent  the nonlinearities at the operating point.  Terms
TEXT: H of up to third order are used in the series expansions.
TEXT: H
TEXT: H      If the optional parameter F2OVERF1  is  not  specified,
TEXT: H .DISTO  does a harmonic analysis - i.e., it analyses distor-
TEXT: H tion in the circuit using only a single input frequency  F1,
TEXT: H which  is swept as specified by arguments of the .DISTO com-
TEXT: H mand exactly as in the .AC command.   Inputs  at  this  fre-
TEXT: H quency  may  be  present  at more than one input source, and
TEXT: H their magnitudes and phases are specified by  the  arguments
TEXT: H of the DISTOF1 keyword in the input file lines for the input
TEXT: H sources (see the description for independent sources).  (The
TEXT: H arguments  of  the  DISTOF2 keyword are not relevant in this
TEXT: H case).  The analysis produces  information  about  the  A.C.
TEXT: H values  of all node voltages and branch currents at the har-
TEXT: H monic frequencies 2F1 and 3F1, vs. the input frequency F1 as
TEXT: H it is swept.  (A value of 1 (as a complex distortion output)
TEXT: H signifies cos(2J(2F1)t) at 2F1  and  cos(2J(3F1)t)  at  3F1,
TEXT: H using  the  convention  that 1 at the input fundamental fre-
TEXT: H quency is equivalent to  cos(2JF1t).)  The  distortion  com-
TEXT: H ponent  desired  (2F1 or 3F1) can be selected using commands
TEXT: H in nutmeg, and then printed or plotted.  (Normally,  one  is
TEXT: H interested  primarily  in the magnitude of the harmonic com-
TEXT: H ponents, so the magnitude of  the  AC  distortion  value  is
TEXT: H looked  at).   It  should  be  noted that these are the A.C.
TEXT: H values of the actual harmonic components, and are not  equal
TEXT: H to  HD2  and HD3.  To obtain HD2 and HD3, one must divide by
TEXT: H the corresponding A.C. values at F1, obtained  from  an  .AC
TEXT: H line.  This division can be done using nutmeg commands.
TEXT: H
TEXT: H      If the optional F2OVERF1  parameter  is  specified,  it
TEXT: H should  be  a real number between (and not equal to) 0.0 and
TEXT: H 1.0; in this case, .DISTO does a spectral analysis.  It con-
TEXT: H siders  the  circuit with sinusoidal inputs at two different
TEXT: H frequencies F1 and F2.  F1 is swept according to the  .DISTO
TEXT: H control line options exactly as in the .AC control line.  F2
TEXT: H is kept fixed at a single frequency as F1 sweeps - the value
TEXT: H at which it is kept fixed is equal to F2OVERF1 times FSTART.
TEXT: H Each independent source in the circuit may potentially  have
TEXT: H two  (superimposed) sinusoidal inputs for distortion, at the
TEXT: H frequencies F1 and F2.  The magnitude and phase  of  the  F1
TEXT: H component are specified by the arguments of the DISTOF1 key-
TEXT: H word in the source's input  line  (see  the  description  of
TEXT: H independent sources); the magnitude and phase of the F2 com-
TEXT: H ponent are specified by the arguments of  the  DISTOF2  key-
TEXT: H word.    The   analysis   produces   plots   of   all   node
TEXT: H voltages/branch currents at the intermodulation product fre-
TEXT: H quencies  F1  +  F2,  F1 - F2, and (2 F1) - F2, vs the swept
TEXT: H frequency F1.  The IM product of interest  may  be  selected
TEXT: H using  the setplot command, and displayed with the print and
TEXT: H plot commands.  It  is  to  be  noted  as  in  the  harmonic
TEXT: H analysis  case,  the  results are the actual AC voltages and
TEXT: H currents at the intermodulation frequencies, and need to  be
TEXT: H normalized  with  respect  to  .AC  values  to obtain the IM
TEXT: H parameters.
TEXT: H
TEXT: H      If the DISTOF1 or DISTOF2 keywords are missing from the
TEXT: H description  of  an  independent source, then that source is
TEXT: H assumed to have no input  at  the  corresponding  frequency.
TEXT: H The  default  values  of the magnitude and phase are 1.0 and
TEXT: H 0.0 respectively.  The phase should be specified in degrees.
TEXT: H
TEXT: H      It should be carefully noted that the  number  F2OVERF1
TEXT: H should  ideally be an irrational number, and that since this
TEXT: H is not possible in practice, efforts should be made to  keep
TEXT: H the denominator in its fractional representation as large as
TEXT: H possible, certainly above 3, for accurate results (i.e.,  if
TEXT: H F2OVERF1 is represented as a fraction A/B, where A and B are
TEXT: H integers with no common factors, B should  be  as  large  as
TEXT: H possible; note that A < B because F2OVERF1 is constrained to
TEXT: H be < 1).   To  illustrate  why,  consider  the  cases  where
TEXT: H F2OVERF1  is  49/100  and  1/2.  In a spectral analysis, the
TEXT: H outputs produced are at F1 + F2, F1 - F2 and 2 F1 - F2.   In
TEXT: H the  latter  case,  F1 - F2 = F2, so the result at the F1-F2
TEXT: H component is erroneous because there is the strong fundamen-
TEXT: H tal  F2  component at the same frequency.  Also, F1 + F2 = 2
TEXT: H F1 - F2 in the latter case, and  each  result  is  erroneous
TEXT: H individually.   This  problem is not there in the case where
TEXT: H F2OVERF1 = 49/100, because F1-F2 = 51/100 F1 < > 49/100 F1 =
TEXT: H F2.   In  this  case, there are two very closely spaced fre-
TEXT: H quency components at F2 and F1 - F2.  One of the  advantages
TEXT: H of the Volterra series technique is that it computes distor-
TEXT: H tions at mix frequencies expressed symbolically (i.e. n F1 +
TEXT: H m F2), therefore one is able to obtain the strengths of dis-
TEXT: H tortion components accurately even if the separation between
TEXT: H them  is  very  small,  as opposed to transient analysis for
TEXT: H example.  The disadvantage is of course that if two  of  the
TEXT: H mix   frequencies  coincide,  the  results  are  not  merged
TEXT: H together and presented (though this could presumably be done
TEXT: H as  a  postprocessing step).  Currently, the interested user
TEXT: H should keep track of the mix frequencies himself or  herself
TEXT: H and  add  the  distortions  at  coinciding  mix  frequencies
TEXT: H together should it be necessary.
TEXT: H
TEXT: H

SUBJECT: .PZ
TITLE: .PZ:  Pole-Zero Analysis
TEXT: H
TEXT: H _4._3._6.  ._P_Z:  _P_o_l_e-_Z_e_r_o _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 CUR POL
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 CUR ZER
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 CUR PZ
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 VOL POL
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 VOL ZER
TEXT: H     .PZ NODE1 NODE2 NODE3 NODE4 VOL PZ
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .PZ 1 0 3 0 CUR POL
TEXT: H     .PZ 2 3 5 0 VOL ZER
TEXT: H     .PZ 4 1 4 1 CUR PZ
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      CUR stands for a transfer function of the type  (output
TEXT: H voltage)/(input  current)  while  VOL  stands for a transfer
TEXT: H function of the type (output voltage)/(input voltage).   POL
TEXT: H stands  for  pole  analysis only, ZER for zero analysis only
TEXT: H and PZ for both.  This feature is provided mainly because if
TEXT: H there  is  a nonconvergence in finding poles or zeros, then,
TEXT: H at least the other can be found.  Finally, NODE1  and  NODE2
TEXT: H are the two input nodes and NODE3 and NODE4 are the two out-
TEXT: H put nodes.  Thus, there is complete  freedom  regarding  the
TEXT: H output and input ports and the type of transfer function.
TEXT: H
TEXT: H      In interactive mode, the command  syntax  is  the  same
TEXT: H except  that the first field is PZ instead of .PZ.  To print
TEXT: H the results, one should use the command 'print all'.
TEXT: H
TEXT: H

SUBJECT: .SENS
TITLE: .SENS:  DC or Small-Signal AC Sensitivity Analysis
TEXT: H
TEXT: H _4._3._7.  ._S_E_N_S:  _D_C _o_r _S_m_a_l_l-_S_i_g_n_a_l _A_C _S_e_n_s_i_t_i_v_i_t_y _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .SENS OUTVAR
TEXT: H     .SENS OUTVAR AC DEC ND FSTART FSTOP
TEXT: H     .SENS OUTVAR AC OCT NO FSTART FSTOP
TEXT: H     .SENS OUTVAR AC LIN NP FSTART FSTOP
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .SENS V(1,OUT)
TEXT: H     .SENS V(OUT) AC DEC 10 100 100k
TEXT: H     .SENS I(VTEST)
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The sensitivity of OUTVAR to all non-zero device param-
TEXT: H eters  is  calculated  when  the SENS analysis is specified.
TEXT: H OUTVAR is a circuit variable (node voltage or voltage-source
TEXT: H branch  current).   The first form calculates sensitivity of
TEXT: H the DC operating-point value of  OUTVAR.   The  second  form
TEXT: H calculates  sensitivity  of  the  AC  values of OUTVAR.  The
TEXT: H parameters listed for AC sensitivity are the same as  in  an
TEXT: H AC  analysis  (see  ".AC"  above).  The output values are in
TEXT: H dimensions of change in output per unit change of input  (as
TEXT: H opposed to percent change in output or per percent change of
TEXT: H input).
TEXT: H
TEXT: H

SUBJECT: .TF
TITLE: .TF:  Transfer Function Analysis
TEXT: H
TEXT: H _4._3._8.  ._T_F:  _T_r_a_n_s_f_e_r _F_u_n_c_t_i_o_n _A_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .TF OUTVAR INSRC
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .TF V(5, 3) VIN
TEXT: H     .TF I(VLOAD) VIN
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The TF line defines the small-signal output  and  input
TEXT: H for  the  dc  small-signal  analysis.   OUTVAR is the small-
TEXT: H signal output variable and INSRC is the  small-signal  input
TEXT: H source.   If  this  line  is included, SPICE computes the dc
TEXT: H small-signal value of the transfer function  (output/input),
TEXT: H input  resistance,  and  output  resistance.   For the first
TEXT: H example, SPICE would compute the ratio of V(5,  3)  to  VIN,
TEXT: H the  small-signal  input  resistance  at VIN, and the small-
TEXT: H signal output resistance measured across nodes 5 and 3.
TEXT: H
TEXT: H


SUBJECT: BATCH OUTPUT
TITLE: BATCH OUTPUT
TEXT: H
TEXT: H _4._4.  _B_A_T_C_H _O_U_T_P_U_T
TEXT: H
TEXT: H
SUBTOPIC: SPICE:.SAVE Lines
SUBTOPIC: SPICE:.PRINT Lines
SUBTOPIC: SPICE:.PLOT Lines
SUBTOPIC: SPICE:.FOUR

SUBJECT: .SAVE Lines
TITLE: .SAVE Lines
TEXT: H
TEXT: H _4._4._1.  ._S_A_V_E _L_i_n_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .SAVE _v_e_c_t_o_r _v_e_c_t_o_r _v_e_c_t_o_r ...
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .SAVE i(vin) input output
TEXT: H     .SAVE @m1[id]
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The vectors listed on the .SAVE line  are  recorded  in
TEXT: H the  rawfile  for use later with spice3 or nutmeg (nutmeg is
TEXT: H just the data-analysis half of spice3, without  the  ability
TEXT: H to  simulate).   The standard vector names are accepted.  If
TEXT: H no .SAVE line is given, then the default set of vectors  are
TEXT: H saved  (node  voltages  and voltage source branch currents).
TEXT: H If .SAVE lines are given, only those vectors  specified  are
TEXT: H saved.   For  more  discussion  on internal device data, see
TEXT: H Appendix B.  See also the section on the interactive command
TEXT: H interpretor for information on how to use the rawfile.
TEXT: H


SUBJECT: .PLOT Lines
TITLE: .PLOT Lines
TEXT: H
TEXT: H _4._4._3.  ._P_L_O_T _L_i_n_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .PLOT PLTYPE OV1 <(PLO1, PHI1)> <OV2 <(PLO2, PHI2)> ... OV8>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .PLOT DC V(4) V(5) V(1)
TEXT: H     .PLOT TRAN V(17, 5) (2, 5) I(VIN) V(17) (1, 9)
TEXT: H     .PLOT AC VM(5) VM(31, 24) VDB(5) VP(5)
TEXT: H     .PLOT DISTO HD2 HD3(R) SIM2
TEXT: H     .PLOT TRAN V(5, 3) V(4) (0, 5) V(7) (0, 10)
TEXT: H
TEXT: H
TEXT: H      The Plot line defines the contents of one  plot  of
TEXT: H from  one to eight output variables.  PLTYPE is the type
TEXT: H of analysis (DC, AC, TRAN, NOISE, or  DISTO)  for  which
TEXT: H the  specified  outputs are desired.  The syntax for the
TEXT: H OVI is identical to that for the .PRINT line and for the
TEXT: H plot command in the interactive mode.
TEXT: H
TEXT: H
TEXT: H      The overlap of two or more traces on any plot is  indi-
TEXT: H cated by the letter X.
TEXT: H
TEXT: H      When more than one output variable appears on the  same
TEXT: H plot,  the  first  variable  specified is printed as well as
TEXT: H plotted.  If a printout of all variables is desired, then  a
TEXT: H companion .PRINT line should be included.
TEXT: H
TEXT: H      There is no limit on the number of .PLOT  lines  speci-
TEXT: H fied for each type of analysis.
TEXT: H
TEXT: H

SUBJECT: .FOUR
TITLE: .FOUR:  Fourier Analysis of Transient Analysis Output
TEXT: H
TEXT: H _4._4._4.  ._F_O_U_R:  _F_o_u_r_i_e_r _A_n_a_l_y_s_i_s _o_f _T_r_a_n_s_i_e_n_t _A_n_a_l_y_s_i_s  _O_u_t-
TEXT: H _p_u_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _f_o_r_m:
TEXT: H
TEXT: H     .FOUR FREQ OV1 <OV2 OV3 ...>
TEXT: H
TEXT: H
TEXT: H _E_x_a_m_p_l_e_s:
TEXT: H
TEXT: H     .FOUR 100K  V(5)
TEXT: H
TEXT: H
TEXT: H      The Four (or Fourier) line controls  whether  SPICE
TEXT: H performs  a  Fourier analysis as a part of the transient
TEXT: H analysis.  FREQ is the fundamental frequency,  and  OV1,
TEXT: H desired.  The Fourier analysis is performed over the in-
TEXT: H terval  <TSTOP-period,  TSTOP>, where TSTOP is the final
TEXT: H time specified for the transient analysis, and period is
TEXT: H one  period  of  the fundamental frequency.  The dc com-
TEXT: H ponent and the first nine harmonics are determined.  For
TEXT: H maximum  accuracy,  TMAX  (see the .TRAN line) should be
TEXT: H set to period/100.0 (or less for very high-Q circuits).
TEXT: H

SUBJECT: INTERACTIVE INTERPRETER
TITLE: INTERACTIVE INTERPRETER
TEXT: H
TEXT: H _5.  _I_N_T_E_R_A_C_T_I_V_E _I_N_T_E_R_P_R_E_T_E_R
TEXT: H
TEXT: H      Spice3 consists of a simulator and a front-end for data
TEXT: H analysis  and  plotting.   The  front-end  may  be  run as a
TEXT: H separate "stand-alone" program under the name Nutmeg.
TEXT: H
TEXT: H      _N_u_t_m_e_g will read in the "raw" data output file  created
TEXT: H by  spice  -r  or  with  the write command in an interactive
TEXT: H Spice3 session.  Nutmeg or interactive Spice3 can plot  data
TEXT: H from  a  simulation  on a graphics terminal or a workstation
TEXT: H display.  Most of the commands available in the  interactive
TEXT: H Spice3 front end are available in nutmeg;  where this is not
TEXT: H the case, Spice-only  commands  have  been  marked  with  an
TEXT: H asterisk  ("*").  Note that the raw output file is different
TEXT: H from the data that Spice2 writes  to  the  standard  output,
TEXT: H which  may  also be produced by spice3 with the "-b" command
TEXT: H line option.
TEXT: H
TEXT: H      Spice and Nutmeg use the X Window System  for  plotting
TEXT: H if they find the environment variable DISPLAY.  Otherwise, a
TEXT: H graphics-terminal independent interface (MFB) is  used.   If
TEXT: H you  are  using  X  on  a  workstation, the DISPLAY variable
TEXT: H should already be set; if you want to display graphics on  a
TEXT: H system different from the one you are running Spice3 or Nut-
TEXT: H meg on, DISPLAY should be of the  form  "_m_a_c_h_i_n_e:0.0".   See
TEXT: H the appropriate documentation on the X Window Sytem for more
TEXT: H details.
TEXT: H
TEXT: H
TEXT: H _C_o_m_m_a_n_d _S_y_n_o_p_s_i_s
TEXT: H
TEXT: H     spice [ -n ] [ -t term ] [ -r rawfile] [ -b ] [ -i ] [ input file ... ]
TEXT: H
TEXT: H     nutmeg [ - ] [ -n ] [ -t term ] [ datafile ... ]
TEXT: H
TEXT: H
TEXT: H
TEXT: H
TEXT: H Options are:
TEXT: H
TEXT: H -    Don't   try   to   load   the   default    data    file
TEXT: H      ("rawspice.raw")  if  no other files are given.  Nutmeg
TEXT: H      only.
TEXT: H
TEXT: H -n (or -N)
TEXT: H      Don't try to source the file ".spiceinit" upon startup.
TEXT: H      Normally  spice  and nutmeg try to find the file in the
TEXT: H      current directory, and if it is not found then  in  the
TEXT: H      user's home directory.
TEXT: H
TEXT: H -t term (or -T term)
TEXT: H      The program is being run on a terminal  with  _m_f_b  name
TEXT: H      term.
TEXT: H
TEXT: H -b (or -B)
TEXT: H      Run in batch mode.   Spice3  reads  the  default  input
TEXT: H      source  (e.g.  keyboard)  or reads the given input file
TEXT: H      and performs the analyses specified; output  is  either
TEXT: H      Spice2-like  line-printer  plots  ("ascii  plots") or a
TEXT: H      spice rawfile.  See the following section for  details.
TEXT: H      Note  that  if the input source is not a terminal (e.g.
TEXT: H      using the IO redirection notation of  "<")  Spice3  de-
TEXT: H      faults  to  batch  mode (-i overrides).  This option is
TEXT: H      valid for Spice3 only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -s (or -S)
TEXT: H      Run in server mode.  This is like  batch  mode,  except
TEXT: H      that  a  temporary  rawfile is used and then written to
TEXT: H      the standard output, preceded by a line with  a  single
TEXT: H      "@",  after  the simulation is done.  This mode is used
TEXT: H      by the spice daemon.  This option is valid  for  Spice3
TEXT: H      only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -i (or -I)
TEXT: H      Run in interactive mode.  This is useful if  the  stan-
TEXT: H      dard  input  is  not a terminal but interactive mode is
TEXT: H      desired.  Command completion is  not  available  unless
TEXT: H      the standard input is a terminal, however.  This option
TEXT: H      is valid for Spice3 only.
TEXT: H
TEXT: H
TEXT: H
TEXT: H -r _r_a_w_f_i_l_e (or -P _r_a_w_f_i_l_e)
TEXT: H      Use _r_a_w_f_i_l_e as the default file into which the  results
TEXT: H      of  the simulation are saved.  This option is valid for
TEXT: H      Spice3 only.
TEXT: H
TEXT: H
TEXT: H      Further arguments to spice are taken to be Spice3 input
TEXT: H files,  which  are  read and saved (if running in batch mode
TEXT: H then they are run immediately).  Spice3 accepts most  Spice2
TEXT: H input  file,  and  output ascii plots, fourier analyses, and
TEXT: H node printouts as specified  in  .plot,  .four,  and  .print
TEXT: H cards.   If  an out parameter is given on a .width card, the
TEXT: H effect is the same as set width = ....  Since  Spice3  ascii
TEXT: H plots  do  not  use  multiple  ranges,  however,  if vectors
TEXT: H together on a .plot card have different ranges they are  not
TEXT: H provide  as  much  information as they would in Spice2.  The
TEXT: H output of Spice3 is also much less verbose than  Spice2,  in
TEXT: H that  the  only  data printed is that requested by the above
TEXT: H cards.
TEXT: H
TEXT: H      For nutmeg, further arguments  are  taken  to  be  data
TEXT: H files  in binary or ascii format (see sconvert(1)) which are
TEXT: H loaded into nutmeg.  If the file is in binary format, it may
TEXT: H be  only  partially  completed  (useful for examining Spice2
TEXT: H output before the simulation is  finished).   One  file  may
TEXT: H contain any number of data sets from different analyses.
SUBTOPIC: SPICE:EXPRESSIONS FUNCTIONS AND CONSTANTS
SUBTOPIC: SPICE:COMMAND INTERPRETATION
SUBTOPIC: SPICE:COMMANDS
SUBTOPIC: SPICE:CONTROL STRUCTURES
SUBTOPIC: SPICE:VARIABLES
SUBTOPIC: SPICE:MISCELLANEOUS
SUBTOPIC: SPICE:BUGS

SUBJECT: EXPRESSIONS FUNCTIONS AND CONSTANTS
TITLE: EXPRESSIONS, FUNCTIONS, AND CONSTANTS
TEXT: H
TEXT: H _5._1.  _E_X_P_R_E_S_S_I_O_N_S, _F_U_N_C_T_I_O_N_S, _A_N_D _C_O_N_S_T_A_N_T_S
TEXT: H
TEXT: H      Spice and Nutmeg data is in the form of vectors:  time,
TEXT: H voltage,  etc.   Each  vector has a type, and vectors can be
TEXT: H operated on and combined algebraicly in ways consistent with
TEXT: H their  types.  Vectors are normally created when a data file
TEXT: H is read in (see the _l_o_a_d command below), and when  the  ini-
TEXT: H tial  datafile is loaded.  They can also be created with the
TEXT: H _l_e_t command.
TEXT: H
TEXT: H
TEXT: H      An expression is an algebraic formula involving vectors
TEXT: H and  scalars (a scalar is a vector of length 1) and the fol-
TEXT: H lowing operations:
TEXT: H
TEXT: H                   +   -    *    /    ^   %
TEXT: H
TEXT: H
TEXT: H % is the modulo operator, and the  comma  operator  has  two
TEXT: H meanings:  if  it is present in the argument list of a user-
TEXT: H definable function, it serves  to  separate  the  arguments.
TEXT: H Otherwise, the term x , y is synonymous with x + j(y).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Also available are the logical operations  &  (and),  |
TEXT: H (or),  !  (not), and the relational operations <, >, >=, <=,
TEXT: H =, and <> (not equal).  If used in an  algebraic  expression
TEXT: H they  work like they would in C, producing values of 0 or 1.
TEXT: H The relational operators have the following synonyms:
TEXT: H
TEXT: H
TEXT: H                             gt    >
TEXT: H                             lt    <
TEXT: H                             ge    >=
TEXT: H                             le    <=
TEXT: H                             ne    <>
TEXT: H                             eq    =
TEXT: H                             and   &
TEXT: H                             or    |
TEXT: H                             not   !
TEXT: H
TEXT: H
TEXT: H These are useful when < and >  might  be  confused  with  IO
TEXT: H redirection (which is almost always).
TEXT: H
TEXT: H
TEXT: H
TEXT: H      The following functions are available:
TEXT: H
TEXT: H mag(vector)                The magnitude of vector
TEXT: H ph(vector)                 The phase of vector
TEXT: H j(vector)                  _i (sqrt(-1)) times vector
TEXT: H real(vector)               The real component of vector
TEXT: H imag(vector)               The imaginary part of vector
TEXT: H db(vector)                 20 log10(mag(vector))
TEXT: H log(vector)                The logarithm (base 10) of vector
TEXT: H ln(vector)                 The natural logarithm (base e) of vector
TEXT: H exp(vector)                e to the vector power
TEXT: H abs(vector)                The absolute value of vector.
TEXT: H sqrt(vector)               The square root of vector.
TEXT: H sin(vector)                The sine of vector.
TEXT: H cos(vector)                The cosine of vector.
TEXT: H tan(vector)                The tangent of vector.
TEXT: H atan(vector)               The inverse tangent of vector.
TEXT: H norm(vector)               The vector normalized  to  1  (i.e,  the
TEXT: H                            largest  magnitude  of  any component is
TEXT: H                            1).
TEXT: H rnd(vector)                A vector with each  component  a  random
TEXT: H                            integer between 0 and the absolute value
TEXT: H                            of  the  vectors's  corresponding   com-
TEXT: H                            ponent.
TEXT: H mean(vector)               The result is a scalar (a length 1  vec-
TEXT: H                            tor) that is the mean of the elements of
TEXT: H                            vector.
TEXT: H vector(number)             The result is a vector of length number,
TEXT: H                            with  elements 0, 1, ... number - 1.  If
TEXT: H                            number is a vector then just  the  first
TEXT: H                            element is taken, and if it isn't an in-
TEXT: H                            teger then the floor of the magnitude is
TEXT: H                            used.
TEXT: H length(vector)             The length of vector.
TEXT: H interpolate(plot.vector)   The result of  interpolating  the  named
TEXT: H                            vector  onto  the  scale  of the current
TEXT: H                            plot.  This function uses  the  variable
TEXT: H                            polydegree  to  determine  the degree of
TEXT: H                            interpolation.
TEXT: H deriv(vector)              Calculates the derivative of  the  given
TEXT: H                            vector.   This uses numeric differentia-
TEXT: H                            tion by interpolating a  polynomial  and
TEXT: H                            may  not  produce  satisfactory  results
TEXT: H                            (particularly with iterated differentia-
TEXT: H                            tion).   The  implementation  only cacu-
TEXT: H                            lates the dirivative with respect to the
TEXT: H                            real componant of that vector's scale.
TEXT: H
TEXT: H
TEXT: H      A vector may be either the name  of  a  vector  already
TEXT: H defined or a floating-point number (a scalar).  A number may
TEXT: H be written in  any  format  acceptable  to  SPICE,  such  as
TEXT: H 14.6Meg  or  -1.231e-4.  Note that you can either use scien-
TEXT: H tific notation or one of the abbreviations like  _M_E_G  or  _G,
TEXT: H but  not  both.   As  with SPICE, a number may have trailing
TEXT: H alphabetic characters after it.
TEXT: H
TEXT: H      The notation expr [num] denotes the num'th  element  of
TEXT: H expr.   For  multi-dimensional vectors, a vector of one less
TEXT: H dimension is returned.  Also for multi-dimensional  vectors,
TEXT: H the  notation  expr[m][n] will return the _nth element of the
TEXT: H mth subvector.  To get a subrange of a vector, use the  form
TEXT: H expr[lower, upper].
TEXT: H
TEXT: H      To reference vectors in a plot that is not the  _c_u_r_r_e_n_t
TEXT: H _p_l_o_t   (see   the  setplot  command,  below),  the  notation
TEXT: H plotname.vecname can be used.
TEXT: H
TEXT: H
TEXT: H      Either a plotname or a vector name may be the  wildcard
TEXT: H all.   If  the  plotname  is  all, matching vectors from all
TEXT: H plots are specified, and if the vector name is all, all vec-
TEXT: H tors  in  the specified plots are referenced.  Note that you
TEXT: H may not use binary operations on expressions involving wild-
TEXT: H cards  - it is not obvious what all + all should denote, for
TEXT: H instance.  Thus some  (contrived)  examples  of  expressions
TEXT: H are:
TEXT: H
TEXT: H     cos(TIME) + db(v(3))
TEXT: H     sin(cos(log([1 2 3 4 5 6 7 8 9 10])))
TEXT: H     TIME * rnd(v(9)) - 15 * cos(vin#branch) ^ [7.9e5 8]
TEXT: H     not ((ac3.FREQ[32] & tran1.TIME[10]) gt 3)
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Vector  names  in  spice  may  have  a  name  such   as
TEXT: H @name[param],  where  name  is  either  the name of a device
TEXT: H instance or model.  This denotes  the  value  of  the  param
TEXT: H parameter  of  the  device  or  model.   See  Appendix B for
TEXT: H details of what parameters are available.  The  value  is  a
TEXT: H vector  of  length  1.  This function is also available with
TEXT: H the show command, and is available with variables  for  con-
TEXT: H venience for command scripts.
TEXT: H
TEXT: H
TEXT: H      There are a number of pre-defined constants in  nutmeg.
TEXT: H They are:
TEXT: H
TEXT: H pi                J (3.14159...)
TEXT: H e                 The base of natural logarithms (2.71828...)
TEXT: H c                 The speed of light (299,792,500 m/sec)
TEXT: H i                 The square root of -1
TEXT: H                                                     o
TEXT: H kelvin            Absolute 0 in Centigrade (-273.15  C)
TEXT: H echarge           The charge on an electron (1.6021918e-19 C)
TEXT: H boltz             Boltzman's constant (1.3806226e-23)
TEXT: H planck            Planck's constant (h = 6.626200e-34)
TEXT: H
TEXT: H
TEXT: H      These are all in MKS units.  If you have another  vari-
TEXT: H able  with  a  name that conflicts with one of these then it
TEXT: H takes precedence.
TEXT: H

TITLE: COMMANDS
TEXT: H
TEXT: H _5._3.  _C_O_M_M_A_N_D_S
TEXT: H
TEXT: H
SUBTOPIC: SPICE:Ac
SUBTOPIC: SPICE:Alias
SUBTOPIC: SPICE:Alter
SUBTOPIC: SPICE:Asciiplot
SUBTOPIC: SPICE:Aspice
SUBTOPIC: SPICE:Bug
SUBTOPIC: SPICE:Cd
SUBTOPIC: SPICE:Destroy
SUBTOPIC: SPICE:Dc
SUBTOPIC: SPICE:Define
SUBTOPIC: SPICE:Delete
SUBTOPIC: SPICE:Diff
SUBTOPIC: SPICE:Display
SUBTOPIC: SPICE:Echo
SUBTOPIC: SPICE:Edit
SUBTOPIC: SPICE:Fourier
SUBTOPIC: SPICE:Hardcopy
SUBTOPIC: SPICE:Help
SUBTOPIC: SPICE:History
SUBTOPIC: SPICE:Iplot
SUBTOPIC: SPICE:Jobs
SUBTOPIC: SPICE:Let
SUBTOPIC: SPICE:Linearize
SUBTOPIC: SPICE:Listing
SUBTOPIC: SPICE:Load
SUBTOPIC: SPICE:Op
SUBTOPIC: SPICE:Plot
SUBTOPIC: SPICE:Print
SUBTOPIC: SPICE:Quit
SUBTOPIC: SPICE:Rehash
SUBTOPIC: SPICE:Reset
SUBTOPIC: SPICE:Reshape
SUBTOPIC: SPICE:Resume
SUBTOPIC: SPICE:Rspice
SUBTOPIC: SPICE:Run
SUBTOPIC: SPICE:Rusage
SUBTOPIC: SPICE:Save
SUBTOPIC: SPICE:Sens
SUBTOPIC: SPICE:Set
SUBTOPIC: SPICE:Setcirc
SUBTOPIC: SPICE:Setplot
SUBTOPIC: SPICE:Settype
SUBTOPIC: SPICE:Shell
SUBTOPIC: SPICE:Shift
SUBTOPIC: SPICE:Show
SUBTOPIC: SPICE:Showmod
SUBTOPIC: SPICE:Source
SUBTOPIC: SPICE:Status
SUBTOPIC: SPICE:Step
SUBTOPIC: SPICE:Stop
SUBTOPIC: SPICE:Tf
SUBTOPIC: SPICE:Trace
SUBTOPIC: SPICE:Tran
SUBTOPIC: SPICE:Transpose
SUBTOPIC: SPICE:Unalias
SUBTOPIC: SPICE:Undefine
SUBTOPIC: SPICE:Unset
SUBTOPIC: SPICE:Version
SUBTOPIC: SPICE:Where
SUBTOPIC: SPICE:Write
SUBTOPIC: SPICE:Xgraph

SUBJECT: Ac
TITLE: Ac*: Perform an AC, small-signal frequency response analysis
TEXT: H
TEXT: H _5._3._1.  _A_c*: _P_e_r_f_o_r_m _a_n _A_C, _s_m_a_l_l-_s_i_g_n_a_l _f_r_e_q_u_e_n_c_y  _r_e_s_p_o_n_s_e
TEXT: H _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     ac ( DEC | OCT | LIN ) _N _F_s_t_a_r_t _F_s_t_o_p
TEXT: H
TEXT: H
TEXT: H      Do an ac analysis.  See the  previous  sections  of
TEXT: H this manual for more details.
TEXT: H
TEXT: H





SUBJECT: Destroy
TITLE: Destroy: Delete a data set
TEXT: H
TEXT: H _5._3._8.  _D_e_s_t_r_o_y: _D_e_l_e_t_e _a _d_a_t_a _s_e_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     destroy [_p_l_o_t_n_a_m_e_s | all]
TEXT: H
TEXT: H
TEXT: H      Release the memory holding the data for the  speci-
TEXT: H fied runs.
TEXT: H
TEXT: H

SUBJECT: Dc
TITLE: Dc*: Perform a DC-sweep analysis
TEXT: H
TEXT: H _5._3._9.  _D_c*: _P_e_r_f_o_r_m _a _D_C-_s_w_e_e_p _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     dc _S_o_u_r_c_e-_N_a_m_e _V_s_t_a_r_t _V_s_t_o_p _V_i_n_c_r [ _S_o_u_r_c_e_2 _V_s_t_a_r_t_2 _V_s_t_o_p_2 _V_i_n_c_r_2 ]
TEXT: H
TEXT: H
TEXT: H      Do a dc transfer curve analysis.  See the  previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H



SUBJECT: Delete
TITLE: Delete*: Remove a trace or breakpoint
TEXT: H
TEXT: H _5._3._1_1.  _D_e_l_e_t_e*: _R_e_m_o_v_e _a _t_r_a_c_e _o_r _b_r_e_a_k_p_o_i_n_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     delete [ _d_e_b_u_g-_n_u_m_b_e_r ... ]
TEXT: H
TEXT: H
TEXT: H      Delete the specified breakpoints and  traces.   The
TEXT: H debug numbers are those shown by the status command (un-
TEXT: H less you do status >  file,  in  which  case  the  debug
TEXT: H numbers are not printed).
TEXT: H
TEXT: H


SUBJECT: Display
TITLE: Display:  List known vectors and types
TEXT: H
TEXT: H _5._3._1_3.  _D_i_s_p_l_a_y:  _L_i_s_t _k_n_o_w_n _v_e_c_t_o_r_s _a_n_d _t_y_p_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     display [varname ...]
TEXT: H
TEXT: H
TEXT: H      Prints a summary of currently defined  vectors,  or
TEXT: H of  the names specified.  The vectors are sorted by name
TEXT: H unless the variable  nosort  is  set.   The  information
TEXT: H given is the name of the vector, the length, the type of
TEXT: H the vector, and whether it is real or complex data.  Ad-
TEXT: H ditionally,  one vector is labeled [scale].  When a com-
TEXT: H mand such as _p_l_o_t is given without a _v_s  argument,  this
TEXT: H scale  is  used  for the X-axis.  It is always the first
TEXT: H vector in a rawfile, or the first vector  defined  in  a
TEXT: H new  plot.   If  you undefine the scale (i.e, _l_e_t _T_I_M_E =
TEXT: H []), one of the remaining vectors becomes the new  scale
TEXT: H (which is undetermined).
TEXT: H
TEXT: H



SUBJECT: Fourier
TITLE: Fourier: Perform a fourier transform
TEXT: H
TEXT: H _5._3._1_6.  _F_o_u_r_i_e_r: _P_e_r_f_o_r_m _a _f_o_u_r_i_e_r _t_r_a_n_s_f_o_r_m
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     fourier fundamental_frequency [value ...]
TEXT: H
TEXT: H
TEXT: H      Does a  fourier  analysis  of  each  of  the  given
TEXT: H values,  using the first 10 multiples of the fundamental
TEXT: H frequency (or the first _n_f_r_e_q_s, if that variable is  set
TEXT: H -  see  below).   The  output  is like that of the .four
TEXT: H Spice3 line.  The values may be  any  valid  expression.
TEXT: H The values are interpolated onto a fixed-space grid with
TEXT: H the number of points given by the fourgridsize variable,
TEXT: H or 200 if it is not set.  The interpolation is of degree
TEXT: H polydegree if that variable is set, or 1.  If polydegree
TEXT: H is  0, then no interpolation is done.  This is likely to
TEXT: H give erroneous results if the time scale is not monoton-
TEXT: H ic, though.
TEXT: H
TEXT: H


SUBJECT: Help
TITLE: Help:  Print summaries of Spice3 commands
TEXT: H
TEXT: H _5._3._1_8.  _H_e_l_p:  _P_r_i_n_t _s_u_m_m_a_r_i_e_s _o_f _S_p_i_c_e_3 _c_o_m_m_a_n_d_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     help [all] [command ...]
TEXT: H
TEXT: H
TEXT: H      Prints help.  If the argument all is given, a short
TEXT: H description  of  everything  you  could possibly type is
TEXT: H printed.  If commands are given, descriptions  of  those
TEXT: H commands are printed.  Otherwise help for only a few ma-
TEXT: H jor commands is printed.
TEXT: H
TEXT: H



SUBJECT: Iplot
TITLE: Iplot*: Incremental plot
TEXT: H
TEXT: H _5._3._2_0.  _I_p_l_o_t*: _I_n_c_r_e_m_e_n_t_a_l _p_l_o_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     iplot [ node ...]
TEXT: H
TEXT: H
TEXT: H      Incrementally plot the values of  the  nodes  while
TEXT: H Spice3  runs.   The  iplot  command can be used with the
TEXT: H where command to find trouble spots in a transient simu-
TEXT: H lation.
TEXT: H
TEXT: H



SUBJECT: Listing
TITLE: Listing*: Print a listing of the current circuit
TEXT: H
TEXT: H _5._3._2_4.  _L_i_s_t_i_n_g*: _P_r_i_n_t _a _l_i_s_t_i_n_g _o_f _t_h_e _c_u_r_r_e_n_t _c_i_r_c_u_i_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     listing [logical] [physical] [deck] [expand]
TEXT: H
TEXT: H
TEXT: H      If the logical argument is given,  the  listing  is
TEXT: H with all continuation lines collapsed into one line, and
TEXT: H if the physical argument is given the lines are  printed
TEXT: H out as they were found in the file.  The default is log-
TEXT: H ical.  A deck listing is just like the physical listing,
TEXT: H except  without  the line numbers it recreates the input
TEXT: H file verbatim (except that it does not  preserve  case).
TEXT: H If  the  word  expand is present, the circuit is printed
TEXT: H with all subcircuits expanded.
TEXT: H
TEXT: H

SUBJECT: Load
TITLE: Load:  Load rawfile data
TEXT: H
TEXT: H _5._3._2_5.  _L_o_a_d:  _L_o_a_d _r_a_w_f_i_l_e _d_a_t_a
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     load [filename] ...
TEXT: H
TEXT: H
TEXT: H      Loads either binary or ascii  format  rawfile  data
TEXT: H from   the   files   named.   The  default  filename  is
TEXT: H rawspice.raw, or the argument to the -r  flag  if  there
TEXT: H was one.
TEXT: H
TEXT: H

SUBJECT: Op
TITLE: Op*: Perform an operating point analysis
TEXT: H
TEXT: H _5._3._2_6.  _O_p*: _P_e_r_f_o_r_m _a_n _o_p_e_r_a_t_i_n_g _p_o_i_n_t _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     op
TEXT: H
TEXT: H
TEXT: H      Do an operating point analysis.  See  the  previous
TEXT: H sections of this manual for more details.
TEXT: H
TEXT: H

SUBJECT: Plot
TITLE: Plot: Plot values on the display
TEXT: H
TEXT: H _5._3._2_7.  _P_l_o_t: _P_l_o_t _v_a_l_u_e_s _o_n _t_h_e _d_i_s_p_l_a_y
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     plot exprs [ylimit ylo yhi] [xlimit xlo xhi] [xindices xilo xihi]
TEXT: H          [xcompress comp] [xdelta xdel] [ydelta ydel] [xlog] [ylog] [loglog]
TEXT: H          [vs xname] [xlabel word] [ylabel word] [title word] [samep]
TEXT: H          [linear]
TEXT: H
TEXT: H
TEXT: H
TEXT: H      Plot the given _e_x_p_r_s on the screen (if  you  are  on  a
TEXT: H graphics  terminal).  The _x_l_i_m_i_t and _y_l_i_m_i_t arguments deter-
TEXT: H mine the high and low x- and y-limits of the  axes,  respec-
TEXT: H tively.   The  _x_i_n_d_i_c_e_s  arguments  determine  what range of
TEXT: H points are to be plotted - everything  between  the  xilo'th
TEXT: H point and the xihi'th point is plotted.  The _x_c_o_m_p_r_e_s_s argu-
TEXT: H ment specifies that only one out of every comp points should
TEXT: H be  plotted.  If an xdelta or a ydelta parameter is present,
TEXT: H it specifies the spacing between grid lines on  the  X-  and
TEXT: H Y-axis.  These parameter names may be abbreviated to _x_l, _y_l,
TEXT: H _x_i_n_d, _x_c_o_m_p, _x_d_e_l, and _y_d_e_l respectively.
TEXT: H
TEXT: H      The _x_n_a_m_e argument is an expression to use as the scale
TEXT: H on  the  x-axis. If xlog or ylog are present then the X or Y
TEXT: H scale, respectively, is logarithmic (loglog is the  same  as
TEXT: H specifying both).  The xlabel and ylabel arguments cause the
TEXT: H specified labels to be used for the X and  Y  axes,  respec-
TEXT: H tively.
TEXT: H
TEXT: H      If samep is given, the values of the  other  parameters
TEXT: H (other  than  xname)  from  the  previous plot, hardcopy, or
TEXT: H asciiplot command is used unless re-defined on  the  command
TEXT: H line.
TEXT: H
TEXT: H      The title argument is used in the  place  of  the  plot
TEXT: H name at the bottom of the graph.
TEXT: H
TEXT: H      The linear keyword is used to override a  default  log-
TEXT: H scale plot (as in the output for an AC analysis).
TEXT: H
TEXT: H      Finally, the keyword polar to generate  a  polar  plot.
TEXT: H To  produce  a smith plot, use the keyword smith.  Note that
TEXT: H the data is transformed, so for smith plots you will see the
TEXT: H data  transformed by the function (x-1)/(x+1).  To produce a
TEXT: H polar plot with a smith  grid  but  without  performing  the
TEXT: H smith transform, use the keyword smithgrid.
TEXT: H

SUBJECT: Print
TITLE: Print:  Print values
TEXT: H
TEXT: H _5._3._2_8.  _P_r_i_n_t:  _P_r_i_n_t _v_a_l_u_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     print [col] [line] expr ...
TEXT: H
TEXT: H
TEXT: H      Prints the vector described by the expression _e_x_p_r.
TEXT: H If  the _c_o_l argument is present, print the vectors named
TEXT: H side by side.  If line is given, the vectors are printed
TEXT: H horizontally.   col  is the default, unless all the vec-
TEXT: H tors named have a length of one, in which case  line  is
TEXT: H the default.  The options width, length, and nobreak are
TEXT: H effective for this command (see asciiplot).  If the  ex-
TEXT: H pression is all, all of the vectors available are print-
TEXT: H ed.  Thus print col all > file prints everything in  the
TEXT: H file in SPICE2 format.  The scale vector (time, frequen-
TEXT: H cy) is always in the first column  unless  the  variable
TEXT: H noprintscale is true.
TEXT: H
TEXT: H





SUBJECT: Resume
TITLE: Resume*: Continue a simulation after a stop
TEXT: H
TEXT: H _5._3._3_3.  _R_e_s_u_m_e*: _C_o_n_t_i_n_u_e _a _s_i_m_u_l_a_t_i_o_n _a_f_t_e_r _a _s_t_o_p
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     resume
TEXT: H
TEXT: H
TEXT: H      Resume a simulation after a  stop  or  interruption
TEXT: H (control-C).
TEXT: H
TEXT: H

SUBJECT: Rspice
TITLE: Rspice:  Remote spice submission
TEXT: H
TEXT: H _5._3._3_4.  _R_s_p_i_c_e:  _R_e_m_o_t_e _s_p_i_c_e _s_u_b_m_i_s_s_i_o_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     rspice _i_n_p_u_t _f_i_l_e
TEXT: H
TEXT: H
TEXT: H      Runs a SPICE-3 remotely taking the input file as  a
TEXT: H SPICE-3  input  file, or the current circuit if no argu-
TEXT: H ment is given.  Nutmeg or Spice3 waits for  the  job  to
TEXT: H complete,  and  passes output from the remote job to the
TEXT: H user's standard output.  When the job  is  finished  the
TEXT: H data is loaded in as with aspice.  If the variable _r_h_o_s_t
TEXT: H is set, nutmeg connects to this host instead of the  de-
TEXT: H fault  remote  Spice3 server machine.  This command uses
TEXT: H the "rsh" command and  thereby  requires  authentication
TEXT: H via  a  ".rhosts" file or other equivalent method.  Note
TEXT: H that "rsh" refers to the "remote shell"  program,  which
TEXT: H may  be  "remsh" on your system; to override the default
TEXT: H name of "rsh", set the variable  _r_e_m_o_t_e__s_h_e_l_l.   If  the
TEXT: H variable  _r_p_r_o_g_r_a_m  is set, then rspice uses this as the
TEXT: H pathname to the program to run on the remote system.
TEXT: H
TEXT: H      Note: rspice will  not  acknowledge  elements  that
TEXT: H have  been  changed  via  the "alter" or "altermod" com-
TEXT: H mands.
TEXT: H
TEXT: H

SUBJECT: Run
TITLE: Run*: Run analysis from the input file
TEXT: H
TEXT: H _5._3._3_5.  _R_u_n*: _R_u_n _a_n_a_l_y_s_i_s _f_r_o_m _t_h_e _i_n_p_u_t _f_i_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     run [rawfile]
TEXT: H
TEXT: H
TEXT: H      Run the simulation as specified in the input  file.
TEXT: H If  there were any of the control lines .ac, .op, .tran,
TEXT: H or .dc, they are executed.  The output is put in rawfile
TEXT: H if it was given, in addition to being available interac-
TEXT: H tively.  In Spice-3e and  earlier  versions,  the  input
TEXT: H file  would  be  re-read  and  any affects of the set or
TEXT: H alter commands would be reversed.  This is no longer the
TEXT: H affect.
TEXT: H
TEXT: H

SUBJECT: Rusage
TITLE: Rusage: Resource usage
TEXT: H
TEXT: H _5._3._3_6.  _R_u_s_a_g_e: _R_e_s_o_u_r_c_e _u_s_a_g_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     rusage [resource ...]
TEXT: H
TEXT: H
TEXT: H      Print resource usage statistics.  If any  resources
TEXT: H are  given, just print the usage of that resource.  Most
TEXT: H resources require that a circuit be  loaded.   Currently
TEXT: H valid resources are:
TEXT: H
TEXT: H elapsed           The amount of  time  elapsed  since  the  last  rusage
TEXT: H                   elaped call.
TEXT: H faults            Number of page faults and context switches (BSD only).
TEXT: H space             Data space used.
TEXT: H time              CPU time used so far.
TEXT: H
TEXT: H temp              Operating temperature.
TEXT: H tnom              Temperature at which device parameters were measured.
TEXT: H equations         Circuit Equations
TEXT: H
TEXT: H time              Total Analysis Time
TEXT: H totiter           Total iterations
TEXT: H accept            Accepted timepoints
TEXT: H rejected          Rejected timepoints
TEXT: H
TEXT: H loadtime          Time spent loading the circuit matrix and RHS.
TEXT: H reordertime       Matrix reordering time
TEXT: H lutime            L-U decomposition time
TEXT: H solvetime         Matrix solve time
TEXT: H
TEXT: H trantime          Transient analysis time
TEXT: H tranpoints        Transient timepoints
TEXT: H traniter          Transient iterations
TEXT: H trancuriters      Transient iterations for the last time point*
TEXT: H tranlutime        Transient L-U decomposition time
TEXT: H transolvetime     Transient matrix solve time
TEXT: H
TEXT: H everything        All of the above.
TEXT: H
TEXT: H * listed incorrectly as "Transient iterations per point".
TEXT: H
TEXT: H

SUBJECT: Save
TITLE: Save*:  Save a set of outputs
TEXT: H
TEXT: H _5._3._3_7.  _S_a_v_e*:  _S_a_v_e _a _s_e_t _o_f _o_u_t_p_u_t_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     save [all | _o_u_t_p_u_t ...]
TEXT: H     .save [all | _o_u_t_p_u_t ...]
TEXT: H
TEXT: H
TEXT: H      Save a set of outputs, discarding the rest.   If  a
TEXT: H node has been mentioned in a save command, it appears in
TEXT: H the working plot after a run has completed,  or  in  the
TEXT: H rawfile  if  spice  is  run in batch mode.  If a node is
TEXT: H traced or plotted (see below) it  is  also  saved.   For
TEXT: H backward  compatibility,  if  there are no save commands
TEXT: H given, all outputs are saved.
TEXT: H
TEXT: H      When the keyword "all" appears in the save command,
TEXT: H all  default  values  (node  voltages and voltage source
TEXT: H currents) are saved in  addition  to  any  other  values
TEXT: H listed.
TEXT: H
TEXT: H





SUBJECT: Setcirc
TITLE: Setcirc*: Change the current circuit
TEXT: H
TEXT: H _5._3._4_0.  _S_e_t_c_i_r_c*: _C_h_a_n_g_e _t_h_e _c_u_r_r_e_n_t _c_i_r_c_u_i_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     setcirc [circuit name]
TEXT: H
TEXT: H
TEXT: H      The current circuit is the one that is used for the
TEXT: H simulation  commands  below.   When  a circuit is loaded
TEXT: H with the source  command  (see  below)  it  becomes  the
TEXT: H current circuit.
TEXT: H
TEXT: H

SUBJECT: Setplot
TITLE: Setplot:  Switch the current set of vectors
TEXT: H
TEXT: H _5._3._4_1.  _S_e_t_p_l_o_t:  _S_w_i_t_c_h _t_h_e _c_u_r_r_e_n_t _s_e_t _o_f _v_e_c_t_o_r_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     setplot [plotname]
TEXT: H
TEXT: H
TEXT: H      Set the current plot to the  plot  with  the  given
TEXT: H name,  or  if  no  name is given, prompt the user with a
TEXT: H menu. (Note that the plots are named as they are loaded,
TEXT: H with  names like tran1 or op2.  These names are shown by
TEXT: H the setplot and display commands and are used  by  diff,
TEXT: H below.)  If the "New plot" item is selected, the current
TEXT: H plot becomes one with no vectors defined.
TEXT: H
TEXT: H      Note that here the word "plot" refers to a group of
TEXT: H vectors that are the result of one SPICE run.  When more
TEXT: H than one file is loaded in, or more  than  one  plot  is
TEXT: H present in one file, nutmeg keeps them separate and only
TEXT: H shows you the vectors in the current plot.
TEXT: H
TEXT: H





SUBJECT: Show
TITLE: Show*: List device state
TEXT: H
TEXT: H _5._3._4_5.  _S_h_o_w*: _L_i_s_t _d_e_v_i_c_e _s_t_a_t_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     show _d_e_v_i_c_e_s [ : _p_a_r_a_m_e_t_e_r_s ] , ...
TEXT: H
TEXT: H
TEXT: H _O_l_d _F_o_r_m
TEXT: H
TEXT: H     show -v @_d_e_v_i_c_e [ [ _n_a_m_e ] ]
TEXT: H
TEXT: H
TEXT: H      The show command prints out tables summarizing  the
TEXT: H operating  condition  of selected devices (much like the
TEXT: H spice2 operation point summary).  If _d_e_v_i_c_e is  missing,
TEXT: H a default set of devices are listed, if _d_e_v_i_c_e is a sin-
TEXT: H gle letter, devices of that type are listed;  if  _d_e_v_i_c_e
TEXT: H is  a subcircuit name (beginning and ending in ":") only
TEXT: H devices in that subcircuit are shown (end the name in  a
TEXT: H double-":"  to get devices within sub-subcircuits recur-
TEXT: H sively).  The second and third  forms  may  be  combined
TEXT: H ("letter:subcircuit:")   or   "letter:subcircuit::")  to
TEXT: H select a specific type of device from a  subcircuit.   A
TEXT: H device's  full  name  may be specified to list only that
TEXT: H device.  Finally, devices may be selected  by  model  by
TEXT: H using  the  form "#modelname" or ":subcircuit#modelname"
TEXT: H or "letter:subcircuit#modelname".
TEXT: H
TEXT: H      If no _p_a_r_a_m_e_t_e_r_s are specified, the  values  for  a
TEXT: H standard  set  of parameters are listed.  If the list of
TEXT: H _p_a_r_a_m_e_t_e_r_s contains a "+", the default set of parameters
TEXT: H is listed along with any other specified parameters.
TEXT: H
TEXT: H      For both _d_e_v_i_c_e_s and _p_a_r_a_m_e_t_e_r_s, the word "all" has
TEXT: H the   obvious  meaning.   Note:  there  must  be  spaces
TEXT: H separating the ":" that divides the _d_e_v_i_c_e list from the
TEXT: H _p_a_r_a_m_e_t_e_r list.
TEXT: H
TEXT: H      The "old form" (with "-v") prints  the  data  in  a
TEXT: H older, more verbose pre-spice3f format.
TEXT: H
TEXT: H

SUBJECT: Showmod
TITLE: Showmod*: List model parameter values
TEXT: H
TEXT: H _5._3._4_6.  _S_h_o_w_m_o_d*: _L_i_s_t _m_o_d_e_l _p_a_r_a_m_e_t_e_r _v_a_l_u_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     showmod _m_o_d_e_l_s [ : _p_a_r_a_m_e_t_e_r_s ] , ...
TEXT: H
TEXT: H
TEXT: H      The showmod command operates like the show  command
TEXT: H (above)  but prints out model parameter values.  The ap-
TEXT: H plicable forms for _m_o_d_e_l_s are a single letter specifying
TEXT: H the  device  type letter, "letter:subckt:", "modelname",
TEXT: H ":subckt:modelname", or "letter:subcircuit:modelname".
TEXT: H
TEXT: H

SUBJECT: Source
TITLE: Source:  Read a Spice3 input file
TEXT: H
TEXT: H _5._3._4_7.  _S_o_u_r_c_e:  _R_e_a_d _a _S_p_i_c_e_3 _i_n_p_u_t _f_i_l_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     source _f_i_l_e
TEXT: H
TEXT: H
TEXT: H      For Spice3: Read the Spice3 input file file.   Nut-
TEXT: H meg and Spice3 commands may be included in the file, and
TEXT: H must be enclosed between the lines ._c_o_n_t_r_o_l  and  ._e_n_d_c.
TEXT: H These  commands  are executed immediately after the cir-
TEXT: H cuit is loaded, so a control line of _a_c  ...  works  the
TEXT: H same  as  the corresponding ._a_c card.  The first line in
TEXT: H any input file is considered a title line and not parsed
TEXT: H but  kept  as the name of the circuit.  The exception to
TEXT: H this rule is the file ._s_p_i_c_e_i_n_i_t.  Thus, a  Spice3  com-
TEXT: H mand script must begin with a blank line and then with a
TEXT: H acters  *#  is considered a control line.  This makes it
TEXT: H possible to imbed commands in Spice3  input  files  that
TEXT: H are ignored by earlier versions of Spice2
TEXT: H
TEXT: H      For Nutmeg: Reads commands from the file  _f_i_l_e_n_a_m_e.
TEXT: H Lines beginning with the character * are considered com-
TEXT: H ments and ignored.
TEXT: H
TEXT: H

SUBJECT: Status
TITLE: Status*: Display breakpoint information
TEXT: H
TEXT: H _5._3._4_8.  _S_t_a_t_u_s*: _D_i_s_p_l_a_y _b_r_e_a_k_p_o_i_n_t _i_n_f_o_r_m_a_t_i_o_n
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     status
TEXT: H
TEXT: H
TEXT: H      Display all of the traces and breakpoints currently
TEXT: H in effect.
TEXT: H
TEXT: H

SUBJECT: Step
TITLE: Step*:  Run a fixed number of timepoints
TEXT: H
TEXT: H _5._3._4_9.  _S_t_e_p*:  _R_u_n _a _f_i_x_e_d _n_u_m_b_e_r _o_f _t_i_m_e_p_o_i_n_t_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     step [number]
TEXT: H
TEXT: H
TEXT: H      Iterate number times, or once, and then stop.
TEXT: H
TEXT: H

SUBJECT: Stop
TITLE: Stop*:  Set a breakpoint
TEXT: H
TEXT: H _5._3._5_0.  _S_t_o_p*:  _S_e_t _a _b_r_e_a_k_p_o_i_n_t
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     stop [ after n] [ when _v_a_l_u_e _c_o_n_d _v_a_l_u_e ] ...
TEXT: H
TEXT: H
TEXT: H      Set a breakpoint.  The argument after n means  stop
TEXT: H after  n iteration number n, and the argument when _v_a_l_u_e
TEXT: H _c_o_n_d _v_a_l_u_e means stop when the first  _v_a_l_u_e  is  in  the
TEXT: H given relation with the second _v_a_l_u_e, the possible rela-
TEXT: H tions being
TEXT: H
TEXT: H           eq   or   =    equal to
TEXT: H           ne   or   <>   not equal to
TEXT: H           gt   or   >    greater than
TEXT: H           lt   or   <    less than
TEXT: H           ge   or   >=   greater than or equal to
TEXT: H           le   or   <=   less than or equal to
TEXT: H
TEXT: H
TEXT: H IO redirection is disabled for the stop command,  since  the
TEXT: H relational  operations  conflict with it (it doesn't produce
TEXT: H any output anyway).  The _v_a_l_u_es above may be node  names  in
TEXT: H the  running circuit, or real values.  If more than one con-
TEXT: H dition is given, e.g.  stop after 4 when v(1) > 4 when  v(2)
TEXT: H < 2, the conjunction of the conditions is implied.
TEXT: H
TEXT: H

SUBJECT: Tf
TITLE: Tf*: Run a Transfer Function analysis
TEXT: H
TEXT: H _5._3._5_1.  _T_f*: _R_u_n _a _T_r_a_n_s_f_e_r _F_u_n_c_t_i_o_n _a_n_a_l_y_s_i_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     tf _o_u_t_p_u_t__n_o_d_e _i_n_p_u_t__s_o_u_r_c_e
TEXT: H
TEXT: H
TEXT: H      The  tf  command  performs  a   transfer   function
TEXT: H analysis,     returning     the     transfer    function
TEXT: H (output/input), output resistance, and input  resistance
TEXT: H between  the  given  output  node  and  the  given input
TEXT: H source.  The analysis assumes a small-signal DC  (slowly
TEXT: H varying) input.
TEXT: H
TEXT: H

SUBJECT: Trace
TITLE: Trace*: Trace nodes
TEXT: H
TEXT: H _5._3._5_2.  _T_r_a_c_e*: _T_r_a_c_e _n_o_d_e_s
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     trace [ node ...]
TEXT: H
TEXT: H
TEXT: H      For every step of an analysis,  the  value  of  the
TEXT: H node  is printed.  Several traces may be active at once.
TEXT: H Tracing is not applicable for all analyses.  To remove a
TEXT: H trace, use the delete command.
TEXT: H
TEXT: H




SUBJECT: Where
TITLE: Where:  Identify troublesome node or device
TEXT: H
TEXT: H _5._3._5_9.  _W_h_e_r_e:  _I_d_e_n_t_i_f_y _t_r_o_u_b_l_e_s_o_m_e _n_o_d_e _o_r _d_e_v_i_c_e
TEXT: H
TEXT: H _G_e_n_e_r_a_l _F_o_r_m
TEXT: H
TEXT: H     where
TEXT: H
TEXT: H
TEXT: H      When performing  a  transient  or  operating  point
TEXT: H analysis,  the  name of the last node or device to cause
TEXT: H non-convergence is saved.  The where command prints  out
TEXT: H this information so that you can examine the circuit and
TEXT: H either correct the problem or make a  bug  report.   You
TEXT: H may  do  this either in the middle of a run or after the
TEXT: H simulator has given up on the analysis.   For  transient
TEXT: H simulation, the iplot command can be used to monitor the
TEXT: H progress of the analysis.  When the analysis slows  down
TEXT: H severly   or   hangs,   interrupt  the  simulator  (with
TEXT: H control-C) and issue the where command.  Note that  only
TEXT: H one  node  or  device  is printed; there may be problems
TEXT: H with more than one node.
TEXT: H
TEXT: H





SUBJECT: APPENDIX B
TITLE: APPENDIX B:  MODEL AND DEVICE PARAMETERS
TEXT: H
TEXT: H _B.  _A_P_P_E_N_D_I_X _B:  _M_O_D_E_L _A_N_D _D_E_V_I_C_E _P_A_R_A_M_E_T_E_R_S
TEXT: H
TEXT: H      The following tables summarize the parameters available
TEXT: H on  each  of  the devices and models in  (note that for some
TEXT: H systems with  limited  memory,  output  parameters  are  not
TEXT: H available).   There are several tables for each type of dev-
TEXT: H ice supported by .  Input parameters to instances and models
TEXT: H are parameters that can occur on an instance or model defin-
TEXT: H ition line in the form "keyword=value"  where  "keyword"  is
TEXT: H the  parameter  name  as given in the tables.  Default input
TEXT: H parameters (such as the resistance  of  a  resistor  or  the
TEXT: H capacitance  of  a capacitor) obviously do not need the key-
TEXT: H word specified.
TEXT: H
TEXT: H      Output parameters are those additional parameters which
TEXT: H are  available for many types of instances for the output of
TEXT: H operating point and debugging information.  These parameters
TEXT: H are  specified  as  "@device[keyword]" and are available for
TEXT: H the most recent point computed or, if specified in a ".save"
TEXT: H statement,  for an entire simulation as a normal output vec-
TEXT: H tor.  Thus, to monitor the gate-to-source capacitance  of  a
TEXT: H MOSFET, a command
TEXT: H
TEXT: H         save @m1[cgs]
TEXT: H
TEXT: H given before a transient  simulation  causes  the  specified
TEXT: H capacitance  value to be saved at each timepoint, and a sub-
TEXT: H sequent command such as
TEXT: H
TEXT: H         plot @m1[cgs]
TEXT: H
TEXT: H produces the desired plot.  (Note that the show command does
TEXT: H not use this format).
TEXT: H
TEXT: H      Some variables are listed as both input and output, and
TEXT: H their  output  simply returns the previously input value, or
TEXT: H the default value after the simulation has been  run.   Some
TEXT: H parameter  are  input only because the output system can not
TEXT: H handle variables of the given type yet, or the need for them
TEXT: H as  output variables has not been apparent.  Many such input
TEXT: H variables are available as output variables in  a  different
TEXT: H format,  such  as  the initial condition vectors that can be
TEXT: H retrieved as individual initial condition values.   Finally,
TEXT: H internally  derived  values are output only and are provided
TEXT: H for debugging and operating point output purposes.
TEXT: H
TEXT: H      Please note  that  these  tables  do  not  provide  the
TEXT: H detailed information available about the parameters provided
TEXT: H in the section on each device and model, but are provided as
TEXT: H a quick reference guide.
SUBTOPIC: SPICE:URC
SUBTOPIC: SPICE:ASRC
SUBTOPIC: SPICE:BJT
SUBTOPIC: SPICE:BSIM1
SUBTOPIC: SPICE:BSIM2
SUBTOPIC: SPICE:Capacitor
SUBTOPIC: SPICE:CCCS
SUBTOPIC: SPICE:CCVS
SUBTOPIC: SPICE:CSwitch
SUBTOPIC: SPICE:Diode
SUBTOPIC: SPICE:Inductor
SUBTOPIC: SPICE:mutual
SUBTOPIC: SPICE:Isource
SUBTOPIC: SPICE:JFET
SUBTOPIC: SPICE:LTRA
SUBTOPIC: SPICE:MES
SUBTOPIC: SPICE:Mos1
SUBTOPIC: SPICE:Mos2
SUBTOPIC: SPICE:Mos3
SUBTOPIC: SPICE:Mos6
SUBTOPIC: SPICE:Resistor
SUBTOPIC: SPICE:Switch
SUBTOPIC: SPICE:Tranline
SUBTOPIC: SPICE:VCCS
SUBTOPIC: SPICE:VCVS
SUBTOPIC: SPICE:Vsource

SUBJECT: URC
TITLE: URC:  Uniform R.C. line
TEXT: H
TEXT: H _B._1.  _U_R_C:  _U_n_i_f_o_r_m _R._C. _l_i_n_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          URC - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length of transmission line             |
TEXT: H| n                 Number of lumps                         |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          URC - instance parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of URC                    |
TEXT: H| neg_node          Negative node of URC                    |
TEXT: H| gnd               Ground node of URC                      |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            URC - model parameters (input-only)            |
TEXT: H|-----------------------------------------------------------+
TEXT: H| urc               Uniform R.C. line model                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           URC - model parameters (input-output)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| k                 Propagation constant                    |
TEXT: H| fmax              Maximum frequency of interest           |
TEXT: H| rperl             Resistance per unit length              |
TEXT: H| cperl             Capacitance per unit length             |
TEXT: H| isperl            Saturation current per length           |
TEXT: H| rsperl            Diode resistance per length             |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: ASRC
TITLE: ASRC:  Arbitrary Source 
TEXT: H
TEXT: H _B._2.  _A_S_R_C:  _A_r_b_i_t_r_a_r_y _S_o_u_r_c_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          ASRC - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Current source                          |
TEXT: H| v                 Voltage source                          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          ASRC - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Current through source                  |
TEXT: H| v                 Voltage across source                   |
TEXT: H| pos_node          Positive Node                           |
TEXT: H| neg_node          Negative Node                           |
TEXT: H ------------------------------------------------------------

SUBJECT: BJT
TITLE: BJT:  Bipolar Junction Transistor
TEXT: H
TEXT: H _B._3.  _B_J_T:  _B_i_p_o_l_a_r _J_u_n_c_t_i_o_n _T_r_a_n_s_i_s_t_o_r
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BJT - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition vector                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BJT - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| icvbe             Initial B-E voltage                     |
TEXT: H| icvce             Initial C-E voltage                     |
TEXT: H| area              Area factor                             |
TEXT: H| temp              instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BJT - instance parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| colnode           Number of collector node                |
TEXT: H| basenode          Number of base node                     |
TEXT: H| emitnode          Number of emitter node                  |
TEXT: H| substnode         Number of substrate node                |
TEXT: H ------------------------------------------------------------
TEXT: H| colprimenode      Internal collector node                 |
TEXT: H| baseprimenode     Internal base node                      |
TEXT: H| emitprimenode     Internal emitter node                   |
TEXT: H| ic                Current at collector node               |
TEXT: H|-----------------------------------------------------------+
TEXT: H  ib                Current at base node
TEXT: H| ie                Emitter current                         |
TEXT: H| is                Substrate current                       |
TEXT: H| vbe               B-E voltage                             |
TEXT: H ------------------------------------------------------------
TEXT: H| vbc               B-C voltage                             |
TEXT: H| gm                Small signal transconductance           |
TEXT: H| gpi               Small signal input conductance - pi     |
TEXT: H| gmu               Small signal conductance - mu           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gx                Conductance from base to internal base  |
TEXT: H| go                Small signal output conductance         |
TEXT: H| geqcb             d(Ibe)/d(Vbc)                           |
TEXT: H| gccs              Internal C-S cap. equiv. cond.          |
TEXT: H ------------------------------------------------------------
TEXT: H| geqbx             Internal C-B-base cap. equiv. cond.     |
TEXT: H| cpi               Internal base to emitter capactance     |
TEXT: H| cmu               Internal base to collector capactiance  |
TEXT: H| cbx               Base to collector capacitance           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ccs               Collector to substrate capacitance      |
TEXT: H| cqbe              Cap. due to charge storage in B-E jct.  |
TEXT: H| cqbc              Cap. due to charge storage in B-C jct.  |
TEXT: H| cqcs              Cap. due to charge storage in C-S jct.  |
TEXT: H| cqbx              Cap. due to charge storage in B-X jct.  |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|     BJT - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| cexbc             Total Capacitance in B-X junction       |
TEXT: H| qbe               Charge storage B-E junction             |
TEXT: H| qbc               Charge storage B-C junction             |
TEXT: H| qcs               Charge storage C-S junction             |
TEXT: H| qbx               Charge storage B-X junction             |
TEXT: H| p                 Power dissipation                       |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BJT - model parameters (input-output)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| npn               NPN type device                         |
TEXT: H| pnp               PNP type device                         |
TEXT: H| is                Saturation Current                      |
TEXT: H| bf                Ideal forward beta                      |
TEXT: H ------------------------------------------------------------
TEXT: H| nf                Forward emission coefficient            |
TEXT: H| vaf               Forward Early voltage                   |
TEXT: H| va                (null)                                  |
TEXT: H| ikf               Forward beta roll-off corner current    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ik                (null)                                  |
TEXT: H| ise               B-E leakage saturation current          |
TEXT: H| ne                B-E leakage emission coefficient        |
TEXT: H| br                Ideal reverse beta                      |
TEXT: H ------------------------------------------------------------
TEXT: H| nr                Reverse emission coefficient            |
TEXT: H| var               Reverse Early voltage                   |
TEXT: H| vb                (null)                                  |
TEXT: H| ikr               reverse beta roll-off corner current    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| isc               B-C leakage saturation current          |
TEXT: H| nc                B-C leakage emission coefficient        |
TEXT: H| rb                Zero bias base resistance               |
TEXT: H| irb               Current for base resistance=(rb+rbm)/2  |
TEXT: H ------------------------------------------------------------
TEXT: H| rbm               Minimum base resistance                 |
TEXT: H| re                Emitter resistance                      |
TEXT: H| rc                Collector resistance                    |
TEXT: H| cje               Zero bias B-E depletion capacitance     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vje               B-E built in potential                  |
TEXT: H| pe                (null)                                  |
TEXT: H| mje               B-E junction grading coefficient        |
TEXT: H| me                (null)                                  |
TEXT: H ------------------------------------------------------------
TEXT: H| tf                Ideal forward transit time              |
TEXT: H| xtf               Coefficient for bias dependence of TF   |
TEXT: H| vtf               Voltage giving VBC dependence of TF     |
TEXT: H| itf               High current dependence of TF           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ptf               Excess phase                            |
TEXT: H| cjc               Zero bias B-C depletion capacitance     |
TEXT: H| vjc               B-C built in potential                  |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|      BJT - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| pc                (null)                                  |
TEXT: H| mjc               B-C junction grading coefficient        |
TEXT: H| mc                (null)                                  |
TEXT: H| xcjc              Fraction of B-C cap to internal base    |
TEXT: H ------------------------------------------------------------
TEXT: H| tr                Ideal reverse transit time              |
TEXT: H| cjs               Zero bias C-S capacitance               |
TEXT: H| ccs               Zero bias C-S capacitance               |
TEXT: H| vjs               Substrate junction built in potential   |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ps                (null)                                  |
TEXT: H| mjs               Substrate junction grading coefficient  |
TEXT: H| ms                (null)                                  |
TEXT: H| xtb               Forward and reverse beta temp. exp.     |
TEXT: H ------------------------------------------------------------
TEXT: H| eg                Energy gap for IS temp. dependency      |
TEXT: H| xti               Temp. exponent for IS                   |
TEXT: H| fc                Forward bias junction fit parameter     |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker Noise Coefficient               |
TEXT: H| af                Flicker Noise Exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            BJT - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              NPN or PNP                              |
TEXT: H| invearlyvoltf     Inverse early voltage:forward           |
TEXT: H| invearlyvoltr     Inverse early voltage:reverse           |
TEXT: H| invrollofff       Inverse roll off - forward              |
TEXT: H ------------------------------------------------------------
TEXT: H| invrolloffr       Inverse roll off - reverse              |
TEXT: H| collectorconduct  Collector conductance                   |
TEXT: H| emitterconduct    Emitter conductance                     |
TEXT: H| transtimevbcfact  Transit time VBC factor                 |
TEXT: H| excessphasefactor Excess phase fact.                      |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: BSIM1
TITLE: BSIM1:  Berkeley Short Channel IGFET Model
TEXT: H
TEXT: H _B._4.  _B_S_I_M_1:  _B_e_r_k_e_l_e_y _S_h_o_r_t _C_h_a_n_n_e_l _I_G_F_E_T _M_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM1 - instance parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Vector of DS,GS,BS initial voltages     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         BSIM1 - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Number of squares in drain              |
TEXT: H| nrs               Number of squares in source             |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device is initially off                 |
TEXT: H| vds               Initial D-S voltage                     |
TEXT: H| vgs               Initial G-S voltage                     |
TEXT: H| vbs               Initial B-S voltage                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BSIM1 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              Flag to indicate NMOS                   |
TEXT: H| pmos              Flag to indicate PMOS                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM1 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vfb               Flat band voltage                       |
TEXT: H  lvfb              Length dependence of vfb
TEXT: H| wvfb              Width dependence of vfb                 |
TEXT: H| phi               Strong inversion surface potential      |
TEXT: H ------------------------------------------------------------
TEXT: H| lphi              Length dependence of phi                |
TEXT: H| wphi              Width dependence of phi                 |
TEXT: H| k1                Bulk effect coefficient 1               |
TEXT: H| lk1               Length dependence of k1                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wk1               Width dependence of k1                  |
TEXT: H| k2                Bulk effect coefficient 2               |
TEXT: H| lk2               Length dependence of k2                 |
TEXT: H| wk2               Width dependence of k2                  |
TEXT: H ------------------------------------------------------------
TEXT: H| eta               VDS dependence of threshold voltage     |
TEXT: H| leta              Length dependence of eta                |
TEXT: H| weta              Width dependence of eta                 |
TEXT: H| x2e               VBS dependence of eta                   |
TEXT: H| lx2e              Length dependence of x2e                |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------------
TEXT: H|          BSIM1 - model input-output parameters - _c_o_n_t_i_n_u_e_d|
TEXT: H|--------------------------------------------------------------------+
TEXT: H|wx2e           Width dependence of x2e                              |
TEXT: H|x3e            VDS dependence of eta                                |
TEXT: H|lx3e           Length dependence of x3e                             |
TEXT: H|wx3e           Width dependence of x3e                              |
TEXT: H ---------------------------------------------------------------------
TEXT: H|dl             Channel length reduction in um                       |
TEXT: H|dw             Channel width reduction in um                        |
TEXT: H|muz            Zero field mobility at VDS=0 VGS=VTH                 |
TEXT: H|x2mz           VBS dependence of muz                                |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|lx2mz          Length dependence of x2mz                            |
TEXT: H|wx2mz          Width dependence of x2mz                             |
TEXT: H mus            Mobility at VDS=VDD VGS=VTH, channel length modulation
TEXT: H|lmus           Length dependence of mus                             |
TEXT: H ---------------------------------------------------------------------
TEXT: H|wmus           Width dependence of mus                              |
TEXT: H|x2ms           VBS dependence of mus                                |
TEXT: H|lx2ms          Length dependence of x2ms                            |
TEXT: H|wx2ms          Width dependence of x2ms                             |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|x3ms           VDS dependence of mus                                |
TEXT: H|lx3ms          Length dependence of x3ms                            |
TEXT: H|wx3ms          Width dependence of x3ms                             |
TEXT: H|u0             VGS dependence of mobility                           |
TEXT: H ---------------------------------------------------------------------
TEXT: H|lu0            Length dependence of u0                              |
TEXT: H|wu0            Width dependence of u0                               |
TEXT: H|x2u0           VBS dependence of u0                                 |
TEXT: H|lx2u0          Length dependence of x2u0                            |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|wx2u0          Width dependence of x2u0                             |
TEXT: H|u1             VDS depence of mobility, velocity saturation         |
TEXT: H|lu1            Length dependence of u1                              |
TEXT: H|wu1            Width dependence of u1                               |
TEXT: H ---------------------------------------------------------------------
TEXT: H|x2u1           VBS depence of u1                                    |
TEXT: H|lx2u1          Length depence of x2u1                               |
TEXT: H|wx2u1          Width depence of x2u1                                |
TEXT: H|x3u1           VDS depence of u1                                    |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|lx3u1          Length dependence of x3u1                            |
TEXT: H|wx3u1          Width depence of x3u1                                |
TEXT: H|n0             Subthreshold slope                                   |
TEXT: H ln0            Length dependence of n0
TEXT: H ---------------------------------------------------------------------
TEXT: H|wn0            Width dependence of n0                               |
TEXT: H|nb             VBS dependence of subthreshold slope                 |
TEXT: H|lnb            Length dependence of nb                              |
TEXT: H|wnb            Width dependence of nb                               |
TEXT: H|--------------------------------------------------------------------+
TEXT: H|nd             VDS dependence of subthreshold slope                 |
TEXT: H|lnd            Length dependence of nd                              |
TEXT: H|wnd            Width dependence of nd                               |
TEXT: H|                              _c_o_n_t_i_n_u_e_d                    |
TEXT: H ---------------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------------------
TEXT: H|             BSIM1 - model input-output parameters - _c_o_n_t_i_n_u_e_d   |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|tox            Gate oxide thickness in um                                 |
TEXT: H|temp           Temperature in degree Celcius                              |
TEXT: H|vdd            Supply voltage to specify mus                              |
TEXT: H|cgso           Gate source overlap capacitance per unit channel width(m)  |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|cgdo           Gate drain overlap capacitance per unit channel width(m)   |
TEXT: H|cgbo           Gate bulk overlap capacitance per unit channel length(m)   |
TEXT: H|xpart          Flag for channel charge partitioning                       |
TEXT: H|rsh            Source drain diffusion sheet resistance in ohm per square  |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|js             Source drain junction saturation current per unit area     |
TEXT: H|pb             Source drain junction built in potential                   |
TEXT: H mj             Source drain bottom junction capacitance grading coefficient
TEXT: H|pbsw           Source drain side junction capacitance built in potential  |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|mjsw           Source drain side junction capacitance grading coefficient |
TEXT: H|cj             Source drain bottom junction capacitance per unit area     |
TEXT: H|cjsw           Source drain side junction capacitance per unit area       |
TEXT: H|wdf            Default width of source drain diffusion in um              |
TEXT: H|dell           Length reduction of source drain diffusion                 |
TEXT: H ---------------------------------------------------------------------------
TEXT: H

SUBJECT: BSIM2
TITLE: BSIM2:  Berkeley Short Channel IGFET Model
TEXT: H
TEXT: H _B._5.  _B_S_I_M_2:  _B_e_r_k_e_l_e_y _S_h_o_r_t _C_h_a_n_n_e_l _I_G_F_E_T _M_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM2 - instance parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Vector of DS,GS,BS initial voltages     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         BSIM2 - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Number of squares in drain              |
TEXT: H| nrs               Number of squares in source             |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device is initially off                 |
TEXT: H| vds               Initial D-S voltage                     |
TEXT: H| vgs               Initial G-S voltage                     |
TEXT: H| vbs               Initial B-S voltage                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           BSIM2 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              Flag to indicate NMOS                   |
TEXT: H| pmos              Flag to indicate PMOS                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          BSIM2 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|vfb             Flat band voltage                          |
TEXT: H|lvfb            Length dependence of vfb                   |
TEXT: H|wvfb            Width dependence of vfb                    |
TEXT: H|phi             Strong inversion surface potential         |
TEXT: H ------------------------------------------------------------
TEXT: H|lphi            Length dependence of phi                   |
TEXT: H|wphi            Width dependence of phi                    |
TEXT: H|k1              Bulk effect coefficient 1                  |
TEXT: H|lk1             Length dependence of k1                    |
TEXT: H|-----------------------------------------------------------+
TEXT: H|wk1             Width dependence of k1                     |
TEXT: H|k2              Bulk effect coefficient 2                  |
TEXT: H|lk2             Length dependence of k2                    |
TEXT: H|wk2             Width dependence of k2                     |
TEXT: H ------------------------------------------------------------
TEXT: H|eta0            VDS dependence of threshold voltage at VDD=0
TEXT: H|leta0           Length dependence of eta0                  |
TEXT: H|weta0           Width dependence of eta0                   |
TEXT: H|etab            VBS dependence of eta                      |
TEXT: H|-----------------------------------------------------------+
TEXT: H|letab           Length dependence of etab                  |
TEXT: H|wetab           Width dependence of etab                   |
TEXT: H|dl              Channel length reduction in um             |
TEXT: H|dw              Channel width reduction in um              |
TEXT: H ------------------------------------------------------------
TEXT: H|mu0             Low-field mobility, at VDS=0 VGS=VTH       |
TEXT: H|mu0b            VBS dependence of low-field mobility       |
TEXT: H|lmu0b           Length dependence of mu0b                  |
TEXT: H|wmu0b           Width dependence of mu0b                   |
TEXT: H|-----------------------------------------------------------+
TEXT: H|mus0            Mobility at VDS=VDD VGS=VTH                |
TEXT: H|lmus0           Length dependence of mus0                  |
TEXT: H|wmus0           Width dependence of mus                    |
TEXT: H|musb            VBS dependence of mus                      |
TEXT: H ------------------------------------------------------------
TEXT: H|lmusb           Length dependence of musb                  |
TEXT: H|wmusb           Width dependence of musb                   |
TEXT: H|mu20            VDS dependence of mu in tanh term          |
TEXT: H|lmu20           Length dependence of mu20                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H|wmu20           Width dependence of mu20                   |
TEXT: H|mu2b            VBS dependence of mu2                      |
TEXT: H|lmu2b           Length dependence of mu2b                  |
TEXT: H|wmu2b           Width dependence of mu2b                   |
TEXT: H ------------------------------------------------------------
TEXT: H|mu2g            VGS dependence of mu2                      |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|     BSIM2 - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| lmu2g             Length dependence of mu2g               |
TEXT: H| wmu2g             Width dependence of mu2g                |
TEXT: H| mu30              VDS dependence of mu in linear term     |
TEXT: H| lmu30             Length dependence of mu30               |
TEXT: H ------------------------------------------------------------
TEXT: H| wmu30             Width dependence of mu30                |
TEXT: H| mu3b              VBS dependence of mu3                   |
TEXT: H| lmu3b             Length dependence of mu3b               |
TEXT: H| wmu3b             Width dependence of mu3b                |
TEXT: H|-----------------------------------------------------------+
TEXT: H| mu3g              VGS dependence of mu3                   |
TEXT: H| lmu3g             Length dependence of mu3g               |
TEXT: H| wmu3g             Width dependence of mu3g                |
TEXT: H| mu40              VDS dependence of mu in linear term     |
TEXT: H ------------------------------------------------------------
TEXT: H| lmu40             Length dependence of mu40               |
TEXT: H| wmu40             Width dependence of mu40                |
TEXT: H| mu4b              VBS dependence of mu4                   |
TEXT: H| lmu4b             Length dependence of mu4b               |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wmu4b             Width dependence of mu4b                |
TEXT: H| mu4g              VGS dependence of mu4                   |
TEXT: H| lmu4g             Length dependence of mu4g               |
TEXT: H| wmu4g             Width dependence of mu4g                |
TEXT: H ------------------------------------------------------------
TEXT: H| ua0               Linear VGS dependence of mobility       |
TEXT: H| lua0              Length dependence of ua0                |
TEXT: H| wua0              Width dependence of ua0                 |
TEXT: H| uab               VBS dependence of ua                    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| luab              Length dependence of uab                |
TEXT: H| wuab              Width dependence of uab                 |
TEXT: H| ub0               Quadratic VGS dependence of mobility    |
TEXT: H| lub0              Length dependence of ub0                |
TEXT: H ------------------------------------------------------------
TEXT: H| wub0              Width dependence of ub0                 |
TEXT: H| ubb               VBS dependence of ub                    |
TEXT: H| lubb              Length dependence of ubb                |
TEXT: H| wubb              Width dependence of ubb                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u10               VDS depence of mobility                 |
TEXT: H| lu10              Length dependence of u10                |
TEXT: H  wu10              Width dependence of u10
TEXT: H| u1b               VBS depence of u1                       |
TEXT: H ------------------------------------------------------------
TEXT: H| lu1b              Length depence of u1b                   |
TEXT: H| wu1b              Width depence of u1b                    |
TEXT: H| u1d               VDS depence of u1                       |
TEXT: H| lu1d              Length depence of u1d                   |
TEXT: H|-----------------------------------------------------------+
TEXT: H| wu1d              Width depence of u1d                    |
TEXT: H| n0                Subthreshold slope at VDS=0 VBS=0       |
TEXT: H| ln0               Length dependence of n0                 |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------------------
TEXT: H|           BSIM2 - model input-output parameters - _c_o_n_t_i_n_u_e_d  |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|wn0            Width dependence of n0                                  |
TEXT: H|nb             VBS dependence of n                                     |
TEXT: H|lnb            Length dependence of nb                                 |
TEXT: H|wnb            Width dependence of nb                                  |
TEXT: H ------------------------------------------------------------------------
TEXT: H|nd             VDS dependence of n                                     |
TEXT: H|lnd            Length dependence of nd                                 |
TEXT: H|wnd            Width dependence of nd                                  |
TEXT: H|vof0           Threshold voltage offset AT VDS=0 VBS=0                 |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|lvof0          Length dependence of vof0                               |
TEXT: H|wvof0          Width dependence of vof0                                |
TEXT: H|vofb           VBS dependence of vof                                   |
TEXT: H|lvofb          Length dependence of vofb                               |
TEXT: H ------------------------------------------------------------------------
TEXT: H|wvofb          Width dependence of vofb                                |
TEXT: H|vofd           VDS dependence of vof                                   |
TEXT: H|lvofd          Length dependence of vofd                               |
TEXT: H|wvofd          Width dependence of vofd                                |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|ai0            Pre-factor of hot-electron effect.                      |
TEXT: H|lai0           Length dependence of ai0                                |
TEXT: H|wai0           Width dependence of ai0                                 |
TEXT: H|aib            VBS dependence of ai                                    |
TEXT: H ------------------------------------------------------------------------
TEXT: H|laib           Length dependence of aib                                |
TEXT: H|waib           Width dependence of aib                                 |
TEXT: H|bi0            Exponential factor of hot-electron effect.              |
TEXT: H|lbi0           Length dependence of bi0                                |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|wbi0           Width dependence of bi0                                 |
TEXT: H|bib            VBS dependence of bi                                    |
TEXT: H|lbib           Length dependence of bib                                |
TEXT: H|wbib           Width dependence of bib                                 |
TEXT: H ------------------------------------------------------------------------
TEXT: H|vghigh         Upper bound of the cubic spline function.               |
TEXT: H|lvghigh        Length dependence of vghigh                             |
TEXT: H|wvghigh        Width dependence of vghigh                              |
TEXT: H|vglow          Lower bound of the cubic spline function.               |
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|lvglow         Length dependence of vglow                              |
TEXT: H|wvglow         Width dependence of vglow                               |
TEXT: H|tox            Gate oxide thickness in um                              |
TEXT: H|temp           Temperature in degree Celcius                           |
TEXT: H ------------------------------------------------------------------------
TEXT: H|vdd            Maximum Vds                                             |
TEXT: H|vgg            Maximum Vgs                                             |
TEXT: H|vbb            Maximum Vbs                                             |
TEXT: H|cgso           Gate source overlap capacitance per unit channel width(m)
TEXT: H|-----------------------------------------------------------------------+
TEXT: H|cgdo           Gate drain overlap capacitance per unit channel width(m)|
TEXT: H|cgbo           Gate bulk overlap capacitance per unit channel length(m)|
TEXT: H|xpart          Flag for channel charge partitioning                    |
TEXT: H|                               _c_o_n_t_i_n_u_e_d                      |
TEXT: H ------------------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------------------
TEXT: H|             BSIM2 - model input-output parameters - _c_o_n_t_i_n_u_e_d   |
TEXT: H|--------------------------------------------------------------------------+
TEXT: H|rsh            Source drain diffusion sheet resistance in ohm per square  |
TEXT: H|js             Source drain junction saturation current per unit area     |
TEXT: H|pb             Source drain junction built in potential                   |
TEXT: H mj             Source drain bottom junction capacitance grading coefficient
TEXT: H|                                                                          |
TEXT: H ---------------------------------------------------------------------------
TEXT: H|pbsw           Source drain side junction capacitance built in potential  |
TEXT: H|mjsw           Source drain side junction capacitance grading coefficient |
TEXT: H|cj             Source drain bottom junction capacitance per unit area     |
TEXT: H|cjsw           Source drain side junction capacitance per unit area       |
TEXT: H|wdf            Default width of source drain diffusion in um              |
TEXT: H|dell           Length reduction of source drain diffusion                 |
TEXT: H ---------------------------------------------------------------------------
TEXT: H

SUBJECT: Capacitor
TITLE: Capacitor:  Fixed capacitor
TEXT: H
TEXT: H _B._6.  _C_a_p_a_c_i_t_o_r:  _F_i_x_e_d _c_a_p_a_c_i_t_o_r
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Capacitor - instance parameters (input-output)      |
TEXT: H|-----------------------------------------------------------+
TEXT: H| capacitance       Device capacitance                      |
TEXT: H| ic                Initial capacitor voltage               |
TEXT: H| w                 Device width                            |
TEXT: H| l                 Device length                           |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Capacitor - instance parameters (output-only)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Device current                          |
TEXT: H| p                 Instantaneous device power              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Capacitor - model parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| c                 Capacitor model                         |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Capacitor - model parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cj                Bottom Capacitance per area             |
TEXT: H| cjsw              Sidewall capacitance per meter          |
TEXT: H| defw              Default width                           |
TEXT: H| narrow            width correction factor                 |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: CCCS
TITLE: CCCS:  Current controlled current source
TEXT: H
TEXT: H _B._7.  _C_C_C_S:  _C_u_r_r_e_n_t _c_o_n_t_r_o_l_l_e_d _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CCCS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Gain of source                          |
TEXT: H| control           Name of controlling source              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          CCCS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| i                 CCCS output current                     |
TEXT: H| v                 CCCS voltage at output                  |
TEXT: H| p                 CCCS power                              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: CCVS
TITLE: CCVS:  Linear current controlled current source
TEXT: H
TEXT: H _B._8.  _C_C_V_S:  _L_i_n_e_a_r _c_u_r_r_e_n_t _c_o_n_t_r_o_l_l_e_d _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CCVS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Transresistance (gain)                  |
TEXT: H| control           Controlling voltage source              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          CCVS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| i                 CCVS output current                     |
TEXT: H| v                 CCVS output voltage                     |
TEXT: H| p                 CCVS power                              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: CSwitch
TITLE: CSwitch:  Current controlled ideal switch
TEXT: H
TEXT: H _B._9.  _C_S_w_i_t_c_h:  _C_u_r_r_e_n_t _c_o_n_t_r_o_l_l_e_d _i_d_e_a_l _s_w_i_t_c_h
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CSwitch - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| on                Initially closed                        |
TEXT: H| off               Initially open                          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        CSwitch - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| control           Name of controlling source              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        CSwitch - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of switch                 |
TEXT: H| neg_node          Negative node of switch                 |
TEXT: H| i                 Switch current                          |
TEXT: H| p                 Instantaneous power                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         CSwitch - model parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| csw               Current controlled switch model         |
TEXT: H| it                Threshold current                       |
TEXT: H| ih                Hysterisis current                      |
TEXT: H| ron               Closed resistance                       |
TEXT: H| roff              Open resistance                         |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          CSwitch - model parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gon               Closed conductance                      |
TEXT: H| goff              Open conductance                        |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Diode
TITLE: Diode:  Junction Diode model
TEXT: H
TEXT: H _B._1_0.  _D_i_o_d_e:  _J_u_n_c_t_i_o_n _D_i_o_d_e _m_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Diode - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Initially off                           |
TEXT: H| temp              Instance temperature                    |
TEXT: H| ic                Initial device voltage                  |
TEXT: H| area              Area factor                             |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Diode - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vd                Diode voltage                           |
TEXT: H| id                Diode current                           |
TEXT: H| c                 Diode current                           |
TEXT: H| gd                Diode conductance                       |
TEXT: H ------------------------------------------------------------
TEXT: H| cd                Diode capacitance                       |
TEXT: H| charge            Diode capacitor charge                  |
TEXT: H| capcur            Diode capacitor current                 |
TEXT: H| p                 Diode power                             |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Diode - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| d                 Diode model                             |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Diode - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| is                Saturation current                      |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| rs                Ohmic resistance                        |
TEXT: H| n                 Emission Coefficient                    |
TEXT: H ------------------------------------------------------------
TEXT: H| tt                Transit Time                            |
TEXT: H| cjo               Junction capacitance                    |
TEXT: H| cj0               (null)                                  |
TEXT: H| vj                Junction potential                      |
TEXT: H|-----------------------------------------------------------+
TEXT: H| m                 Grading coefficient                     |
TEXT: H| eg                Activation energy                       |
TEXT: H| xti               Saturation current temperature exp.     |
TEXT: H| kf                flicker noise coefficient               |
TEXT: H ------------------------------------------------------------
TEXT: H| af                flicker noise exponent                  |
TEXT: H| fc                Forward bias junction fit parameter     |
TEXT: H| bv                Reverse breakdown voltage               |
TEXT: H| ibv               Current at reverse breakdown voltage    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Diode - model parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cond              Ohmic conductance                       |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Inductor
TITLE: Inductor:  Inductors
TEXT: H
TEXT: H _B._1_1.  _I_n_d_u_c_t_o_r:  _I_n_d_u_c_t_o_r_s
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Inductor - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| inductance        Inductance of inductor                  |
TEXT: H| ic                Initial current through inductor        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H -------------------------------------------------------------
TEXT: H|        Inductor - instance parameters (output-only)        |
TEXT: H|------------------------------------------------------------+
TEXT: H|flux           Flux through inductor                        |
TEXT: H|v              Terminal voltage of inductor                 |
TEXT: H|volt                                                        |
TEXT: H|i              Current through the inductor                 |
TEXT: H|current                                                     |
TEXT: H p              instantaneous power dissipated by the inductor
TEXT: H|                                                            |
TEXT: H -------------------------------------------------------------
TEXT: H

SUBJECT: mutual
TITLE: mutual:  Mutual inductors
TEXT: H
TEXT: H _B._1_2.  _m_u_t_u_a_l:  _M_u_t_u_a_l _i_n_d_u_c_t_o_r_s
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        mutual - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| k                 Mutual inductance                       |
TEXT: H| coefficient       (null)                                  |
TEXT: H| inductor1         First coupled inductor                  |
TEXT: H| inductor2         Second coupled inductor                 |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Isource
TITLE: Isource:  Independent current source
TEXT: H
TEXT: H _B._1_3.  _I_s_o_u_r_c_e:  _I_n_d_e_p_e_n_d_e_n_t _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Isource - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pulse             Pulse description                       |
TEXT: H| sine              Sinusoidal source description           |
TEXT: H| sin               Sinusoidal source description           |
TEXT: H| exp               Exponential source description          |
TEXT: H ------------------------------------------------------------
TEXT: H| pwl               Piecewise linear description            |
TEXT: H| sffm              single freq. FM description             |
TEXT: H| ac                AC magnitude,phase vector               |
TEXT: H| c                 Current through current source          |
TEXT: H| distof1           f1 input for distortion                 |
TEXT: H| distof2           f2 input for distortion                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Isource - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| dc                DC value of source                      |
TEXT: H| acmag             AC magnitude                            |
TEXT: H| acphase           AC phase                                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Isource - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| pos_node          Positive node of source                 |
TEXT: H  acreal            AC real part
TEXT: H| acimag            AC imaginary part                       |
TEXT: H ------------------------------------------------------------
TEXT: H| function          Function of the source                  |
TEXT: H| order             Order of the source function            |
TEXT: H| coeffs            Coefficients of the source              |
TEXT: H| v                 Voltage across the supply               |
TEXT: H| p                 Power supplied by the source            |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: JFET
TITLE: JFET:  Junction Field effect transistor
TEXT: H
TEXT: H _B._1_4.  _J_F_E_T:  _J_u_n_c_t_i_o_n _F_i_e_l_d _e_f_f_e_c_t _t_r_a_n_s_i_s_t_o_r
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         JFET - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Initial VDS,VGS vector                  |
TEXT: H| area              Area factor                             |
TEXT: H| ic-vds            Initial D-S voltage                     |
TEXT: H| ic-vgs            Initial G-S volrage                     |
TEXT: H| temp              Instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ---------------------------------------------------------------
TEXT: H|           JFET - instance parameters (output-only)           |
TEXT: H|--------------------------------------------------------------+
TEXT: H|drain-node       Number of drain node                         |
TEXT: H|gate-node        Number of gate node                          |
TEXT: H|source-node      Number of source node                        |
TEXT: H|drain-prime-node Internal drain node                          |
TEXT: H ---------------------------------------------------------------
TEXT: H|source-prime-nodeInternal source node                         |
TEXT: H|vgs              Voltage G-S                                  |
TEXT: H|vgd              Voltage G-D                                  |
TEXT: H|ig               Current at gate node                         |
TEXT: H|--------------------------------------------------------------+
TEXT: H|id               Current at drain node                        |
TEXT: H|is               Source current                               |
TEXT: H|igd              Current G-D                                  |
TEXT: H|gm               Transconductance                             |
TEXT: H ---------------------------------------------------------------
TEXT: H|gds              Conductance D-S                              |
TEXT: H|ggs              Conductance G-S                              |
TEXT: H|ggd              Conductance G-D                              |
TEXT: H|qgs              Charge storage G-S junction                  |
TEXT: H|--------------------------------------------------------------+
TEXT: H|qgd              Charge storage G-D junction                  |
TEXT: H cqgs             Capacitance due to charge storage G-S junction
TEXT: H|                                                              |
TEXT: H cqgd             Capacitance due to charge storage G-D junction
TEXT: H|p                Power dissipated by the JFET                 |
TEXT: H ---------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           JFET - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| njf               N type JFET model                       |
TEXT: H| pjf               P type JFET model                       |
TEXT: H| vt0               Threshold voltage                       |
TEXT: H| vto               (null)                                  |
TEXT: H ------------------------------------------------------------
TEXT: H| beta              Transconductance parameter              |
TEXT: H| lambda            Channel length modulation param.        |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cgs               G-S junction capactance                 |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|      JFET - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| cgd               G-D junction cap                        |
TEXT: H| pb                Gate junction potential                 |
TEXT: H| is                Gate junction saturation current        |
TEXT: H| fc                Forward bias junction fit parm.         |
TEXT: H ------------------------------------------------------------
TEXT: H| b                 Doping tail parameter                   |
TEXT: H| tnom              parameter measurement temperature       |
TEXT: H| kf                Flicker Noise Coefficient               |
TEXT: H| af                Flicker Noise Exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           JFET - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-type or P-type JFET model             |
TEXT: H| gd                Drain conductance                       |
TEXT: H| gs                Source conductance                      |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: LTRA
TITLE: LTRA:  Lossy transmission line
TEXT: H
TEXT: H _B._1_5.  _L_T_R_A:  _L_o_s_s_y _t_r_a_n_s_m_i_s_s_i_o_n _l_i_n_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          LTRA - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition vector:v1,i1,v2,i2    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H ------------------------------------------------------------
TEXT: H|         LTRA - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| v1                Initial voltage at end 1                |
TEXT: H| v2                Initial voltage at end 2                |
TEXT: H| i1                Initial current at end 1                |
TEXT: H| i2                Initial current at end 2                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          LTRA - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node1         Positive node of end 1 of t-line        |
TEXT: H| neg_node1         Negative node of end 1 of t.line        |
TEXT: H| pos_node2         Positive node of end 2 of t-line        |
TEXT: H| neg_node2         Negative node of end 2 of t-line        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           LTRA - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|ltra            LTRA model                                 |
TEXT: H|r               Resistance per metre                       |
TEXT: H|l               Inductance per metre                       |
TEXT: H|g               (null)                                     |
TEXT: H ------------------------------------------------------------
TEXT: H|c               Capacitance per metre                      |
TEXT: H|len             length of line                             |
TEXT: H|nocontrol       No timestep control                        |
TEXT: H|steplimit       always limit timestep to 0.8*(delay of line)
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H -----------------------------------------------------------------------------------
TEXT: H|                 LTRA - model input-output parameters - _c_o_n_t_i_n_u_e_d        |
TEXT: H|----------------------------------------------------------------------------------+
TEXT: H|nosteplimit    don't always limit timestep to 0.8*(delay of line)                 |
TEXT: H|lininterp      use linear interpolation                                           |
TEXT: H|quadinterp     use quadratic interpolation                                        |
TEXT: H|mixedinterp    use linear interpolation if quadratic results look unacceptable    |
TEXT: H -----------------------------------------------------------------------------------
TEXT: H|truncnr        use N-R iterations for step calculation in LTRAtrunc               |
TEXT: H|truncdontcut   don't limit timestep to keep impulse response calculation errors low
TEXT: H|compactrel     special reltol for straight line checking                          |
TEXT: H|compactabs     special abstol for straight line checking                          |
TEXT: H -----------------------------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           LTRA - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rel               Rel. rate of change of deriv. for bkpt  |
TEXT: H| abs               Abs. rate of change of deriv. for bkpt  |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: MES
TITLE: MES:  GaAs MESFET model
TEXT: H
TEXT: H _B._1_6.  _M_E_S:  _G_a_A_s _M_E_S_F_E_T _m_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          MES - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| area              Area factor                             |
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          MES - instance parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|off            Device initially off                        |
TEXT: H|dnode          Number of drain node                        |
TEXT: H|gnode          Number of gate node                         |
TEXT: H|snode          Number of source node                       |
TEXT: H ------------------------------------------------------------
TEXT: H|dprimenode     Number of internal drain node               |
TEXT: H|sprimenode     Number of internal source node              |
TEXT: H|vgs            Gate-Source voltage                         |
TEXT: H|vgd            Gate-Drain voltage                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H|cg             Gate capacitance                            |
TEXT: H|cd             Drain capacitance                           |
TEXT: H|cgd            Gate-Drain capacitance                      |
TEXT: H|gm             Transconductance                            |
TEXT: H ------------------------------------------------------------
TEXT: H|gds            Drain-Source conductance                    |
TEXT: H|ggs            Gate-Source conductance                     |
TEXT: H|ggd            Gate-Drain conductance                      |
TEXT: H|cqgs           Capacitance due to gate-source charge storage
TEXT: H|-----------------------------------------------------------+
TEXT: H|cqgd           Capacitance due to gate-drain charge storage|
TEXT: H|qgs            Gate-Source charge storage                  |
TEXT: H|qgd            Gate-Drain charge storage                   |
TEXT: H|is             Source current                              |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|     MES - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| p                 Power dissipated by the mesfet          |
TEXT: H ------------------------------------------------------------
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            MES - model parameters (input-only)            |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmf               N type MESfet model                     |
TEXT: H| pmf               P type MESfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           MES - model parameters (input-output)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vt0               Pinch-off voltage                       |
TEXT: H| vto               (null)                                  |
TEXT: H| alpha             Saturation voltage parameter            |
TEXT: H| beta              Transconductance parameter              |
TEXT: H ------------------------------------------------------------
TEXT: H| lambda            Channel length modulation parm.         |
TEXT: H| b                 Doping tail extending parameter         |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cgs               G-S junction capacitance                |
TEXT: H| cgd               G-D junction capacitance                |
TEXT: H| pb                Gate junction potential                 |
TEXT: H| is                Junction saturation current             |
TEXT: H ------------------------------------------------------------
TEXT: H| fc                Forward bias junction fit parm.         |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            MES - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-type or P-type MESfet model           |
TEXT: H| gd                Drain conductance                       |
TEXT: H| gs                Source conductance                      |
TEXT: H| depl_cap          Depletion capacitance                   |
TEXT: H| vcrit             Critical voltage                        |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Mos1
TITLE: Mos1:  Level 1 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._1_7.  _M_o_s_1:  _L_e_v_e_l _1 _M_O_S_f_e_t _m_o_d_e_l  _w_i_t_h  _M_e_y_e_r  _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos1 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos1 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| temp              Instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos1 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H| ib                Bulk current                            |
TEXT: H ------------------------------------------------------------
TEXT: H| ibd               B-D junction current                    |
TEXT: H| ibs               B-S junction current                    |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of the drain node                |
TEXT: H| gnode             Number of the gate node                 |
TEXT: H ------------------------------------------------------------
TEXT: H| snode             Number of the source node               |
TEXT: H| bnode             Number of the node                      |
TEXT: H| dnodeprime        Number of int. drain node               |
TEXT: H| snodeprime        Number of int. source node              |
TEXT: H|-----------------------------------------------------------+
TEXT: H| von                                                       |
TEXT: H| vdsat             Saturation drain voltage                |
TEXT: H| sourcevcrit       Critical source voltage                 |
TEXT: H| drainvcrit        Critical drain voltage                  |
TEXT: H| rs                Source resistance                       |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos1 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|sourceconductanceConductance of source                       |
TEXT: H|rd               Drain conductance                           |
TEXT: H|drainconductance Conductance of drain                        |
TEXT: H|gm               Transconductance                            |
TEXT: H --------------------------------------------------------------
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gmb              Bulk-Source transconductance                |
TEXT: H|gmbs                                                         |
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H --------------------------------------------------------------
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H|cqgs             Capacitance due to gate-source charge storage
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|-------------------------------------------------------------+
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H cqbs             Capacitance due to bulk-source charge storage
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H --------------------------------------------------------------
TEXT: H|cbdsw0                                                       |
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0                                                       |
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H|-------------------------------------------------------------+
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|p                Instaneous power                            |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos1 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos1 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kp                Transconductance parameter              |
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H ------------------------------------------------------------
TEXT: H| phi               Surface potential                       |
TEXT: H| lambda            Channel length modulation               |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|      Mos1 - model input-output parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-----------------------------------------------------------+
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H ------------------------------------------------------------
TEXT: H| pb                Bulk junction potential                 |
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H ------------------------------------------------------------
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H| tox               Oxide thickness                         |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u0                Surface mobility                        |
TEXT: H| uo                (null)                                  |
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| nsub              Substrate doping                        |
TEXT: H ------------------------------------------------------------
TEXT: H| tpg               Gate type                               |
TEXT: H| nss               Surface state density                   |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos1 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Mos2
TITLE: Mos2:  Level 2 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._1_8.  _M_o_s_2:  _L_e_v_e_l _2 _M_O_S_f_e_t _m_o_d_e_l  _w_i_t_h  _M_e_y_e_r  _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos2 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos2 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| temp              Instance operating temperature          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos2 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| cd                                                        |
TEXT: H| ibd               B-D junction current                    |
TEXT: H| ibs               B-S junction current                    |
TEXT: H ------------------------------------------------------------
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H| ib                Bulk current                            |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of drain node                    |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode             Number of gate node                     |
TEXT: H| snode             Number of source node                   |
TEXT: H| bnode             Number of bulk node                     |
TEXT: H| dnodeprime        Number of internal drain node           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| snodeprime        Number of internal source node          |
TEXT: H| von                                                       |
TEXT: H| vdsat             Saturation drain voltage                |
TEXT: H| sourcevcrit       Critical source voltage                 |
TEXT: H| drainvcrit        Critical drain voltage                  |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos2 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|rs               Source resistance                           |
TEXT: H|sourceconductanceSource conductance                          |
TEXT: H|rd               Drain resistance                            |
TEXT: H|drainconductance Drain conductance                           |
TEXT: H --------------------------------------------------------------
TEXT: H|gm               Transconductance                            |
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gmb              Bulk-Source transconductance                |
TEXT: H|gmbs                                                         |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H --------------------------------------------------------------
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbdsw0                                                       |
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0                                                       |
TEXT: H cqgs             Capacitance due to gate-source charge storage
TEXT: H|                                                             |
TEXT: H --------------------------------------------------------------
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H|cqbs             Capacitance due to bulk-source charge storage
TEXT: H|-------------------------------------------------------------+
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|p                Instantaneous power                         |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos2 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos2 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kp                Transconductance parameter              |
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H ------------------------------------------------------------
TEXT: H| phi               Surface potential                       |
TEXT: H| lambda            Channel length modulation               |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H| pb                Bulk junction potential                 |
TEXT: H ------------------------------------------------------------
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H| rsh               Sheet resistance                        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H ------------------------------------------------------------
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H| tox               Oxide thickness                         |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H| u0                Surface mobility                        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| uo                (null)                                  |
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| nsub              Substrate doping                        |
TEXT: H| tpg               Gate type                               |
TEXT: H ------------------------------------------------------------
TEXT: H| nss               Surface state density                   |
TEXT: H| delta             Width effect on threshold               |
TEXT: H| uexp              Crit. field exp for mob. deg.           |
TEXT: H| ucrit             Crit. field for mob. degradation        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vmax              Maximum carrier drift velocity          |
TEXT: H| xj                Junction depth                          |
TEXT: H| neff              Total channel charge coeff.             |
TEXT: H| nfs               Fast surface state density              |
TEXT: H ------------------------------------------------------------
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos2 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------

SUBJECT: Mos3
TITLE: Mos3:  Level 3 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._1_9.  _M_o_s_3:  _L_e_v_e_l _3 _M_O_S_f_e_t _m_o_d_e_l  _w_i_t_h  _M_e_y_e_r  _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos3 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos3 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H| temp              Instance operating temperature          |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos3 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| cd                Drain current                           |
TEXT: H| ibd               B-D junction current                    |
TEXT: H| ibs               B-S junction current                    |
TEXT: H ------------------------------------------------------------
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H| ib                Bulk current                            |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of drain node                    |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode             Number of gate node                     |
TEXT: H| snode             Number of source node                   |
TEXT: H| bnode             Number of bulk node                     |
TEXT: H| dnodeprime        Number of internal drain node           |
TEXT: H| snodeprime        Number of internal source node          |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos3 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|von              Turn-on voltage                             |
TEXT: H|vdsat            Saturation drain voltage                    |
TEXT: H|sourcevcrit      Critical source voltage                     |
TEXT: H|drainvcrit       Critical drain voltage                      |
TEXT: H --------------------------------------------------------------
TEXT: H|rs               Source resistance                           |
TEXT: H|sourceconductanceSource conductance                          |
TEXT: H|rd               Drain resistance                            |
TEXT: H|drainconductance Drain conductance                           |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gm               Transconductance                            |
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gmb              Bulk-Source transconductance                |
TEXT: H|gmbs             Bulk-Source transconductance                |
TEXT: H --------------------------------------------------------------
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H cqgs             Capacitance due to gate-source charge storage
TEXT: H|                                                             |
TEXT: H --------------------------------------------------------------
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H|cqbs             Capacitance due to bulk-source charge storage
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H|cbdsw0           Zero-Bias B-D sidewall capacitance          |
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0           Zero-Bias B-S sidewall capacitance          |
TEXT: H --------------------------------------------------------------
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|p                Instantaneous power                         |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos3 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos3 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kp                Transconductance parameter              |
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H ------------------------------------------------------------
TEXT: H| phi               Surface potential                       |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H| pb                Bulk junction potential                 |
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H ------------------------------------------------------------
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H|-----------------------------------------------------------+
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H ------------------------------------------------------------
TEXT: H| tox               Oxide thickness                         |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H| u0                Surface mobility                        |
TEXT: H| uo                (null)                                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| nsub              Substrate doping                        |
TEXT: H| tpg               Gate type                               |
TEXT: H| nss               Surface state density                   |
TEXT: H ------------------------------------------------------------
TEXT: H| vmax              Maximum carrier drift velocity          |
TEXT: H| xj                Junction depth                          |
TEXT: H| nfs               Fast surface state density              |
TEXT: H| xd                Depletion layer width                   |
TEXT: H|-----------------------------------------------------------+
TEXT: H| alpha             Alpha                                   |
TEXT: H| eta               Vds dependence of threshold voltage     |
TEXT: H| delta             Width effect on threshold               |
TEXT: H| input_delta       (null)                                  |
TEXT: H ------------------------------------------------------------
TEXT: H| theta             Vgs dependence on mobility              |
TEXT: H| kappa             Kappa                                   |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H| kf                Flicker noise coefficient               |
TEXT: H| af                Flicker noise exponent                  |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos3 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Mos6
TITLE: Mos6:  Level 6 MOSfet model with Meyer capacitance model
TEXT: H
TEXT: H _B._2_0.  _M_o_s_6:  _L_e_v_e_l _6 _M_O_S_f_e_t _m_o_d_e_l  _w_i_t_h  _M_e_y_e_r  _c_a_p_a_c_i_t_a_n_c_e
TEXT: H _m_o_d_e_l
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos6 - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| off               Device initially off                    |
TEXT: H| ic                Vector of D-S, G-S, B-S voltages        |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Mos6 - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H| ad                Drain area                              |
TEXT: H| as                Source area                             |
TEXT: H ------------------------------------------------------------
TEXT: H| pd                Drain perimeter                         |
TEXT: H| ps                Source perimeter                        |
TEXT: H| nrd               Drain squares                           |
TEXT: H| nrs               Source squares                          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| icvds             Initial D-S voltage                     |
TEXT: H| icvgs             Initial G-S voltage                     |
TEXT: H| icvbs             Initial B-S voltage                     |
TEXT: H| temp              Instance temperature                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Mos6 - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| id                Drain current                           |
TEXT: H| cd                Drain current                           |
TEXT: H| is                Source current                          |
TEXT: H| ig                Gate current                            |
TEXT: H ------------------------------------------------------------
TEXT: H| ib                Bulk current                            |
TEXT: H| ibs               B-S junction capacitance                |
TEXT: H| ibd               B-D junction capacitance                |
TEXT: H| vgs               Gate-Source voltage                     |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vds               Drain-Source voltage                    |
TEXT: H| vbs               Bulk-Source voltage                     |
TEXT: H| vbd               Bulk-Drain voltage                      |
TEXT: H| dnode             Number of the drain node                |
TEXT: H ------------------------------------------------------------
TEXT: H| gnode             Number of the gate node                 |
TEXT: H| snode             Number of the source node               |
TEXT: H| bnode             Number of the node                      |
TEXT: H| dnodeprime        Number of int. drain node               |
TEXT: H| snodeprime        Number of int. source node              |
TEXT: H|                         _c_o_n_t_i_n_u_e_d                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H --------------------------------------------------------------
TEXT: H|      Mos6 - instance output-only parameters - _c_o_n_t_i_n_u_e_d
TEXT: H|-------------------------------------------------------------+
TEXT: H|rs               Source resistance                           |
TEXT: H|sourceconductanceSource conductance                          |
TEXT: H|rd               Drain resistance                            |
TEXT: H|drainconductance Drain conductance                           |
TEXT: H --------------------------------------------------------------
TEXT: H|von              Turn-on voltage                             |
TEXT: H|vdsat            Saturation drain voltage                    |
TEXT: H|sourcevcrit      Critical source voltage                     |
TEXT: H|drainvcrit       Critical drain voltage                      |
TEXT: H|-------------------------------------------------------------+
TEXT: H|gmbs             Bulk-Source transconductance                |
TEXT: H|gm               Transconductance                            |
TEXT: H|gds              Drain-Source conductance                    |
TEXT: H|gbd              Bulk-Drain conductance                      |
TEXT: H --------------------------------------------------------------
TEXT: H|gbs              Bulk-Source conductance                     |
TEXT: H|cgs              Gate-Source capacitance                     |
TEXT: H|cgd              Gate-Drain capacitance                      |
TEXT: H|cgb              Gate-Bulk capacitance                       |
TEXT: H|-------------------------------------------------------------+
TEXT: H|cbd              Bulk-Drain capacitance                      |
TEXT: H|cbs              Bulk-Source capacitance                     |
TEXT: H|cbd0             Zero-Bias B-D junction capacitance          |
TEXT: H|cbdsw0                                                       |
TEXT: H --------------------------------------------------------------
TEXT: H|cbs0             Zero-Bias B-S junction capacitance          |
TEXT: H|cbssw0                                                       |
TEXT: H|cqgs             Capacitance due to gate-source charge storage
TEXT: H|cqgd             Capacitance due to gate-drain charge storage|
TEXT: H|-------------------------------------------------------------+
TEXT: H|cqgb             Capacitance due to gate-bulk charge storage |
TEXT: H|cqbd             Capacitance due to bulk-drain charge storage|
TEXT: H cqbs             Capacitance due to bulk-source charge storage
TEXT: H|qgs              Gate-Source charge storage                  |
TEXT: H --------------------------------------------------------------
TEXT: H|qgd              Gate-Drain charge storage                   |
TEXT: H|qgb              Gate-Bulk charge storage                    |
TEXT: H|qbd              Bulk-Drain charge storage                   |
TEXT: H|qbs              Bulk-Source charge storage                  |
TEXT: H|p                Instaneous power                            |
TEXT: H --------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|            Mos6 - model parameters (input-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| nmos              N type MOSfet model                     |
TEXT: H| pmos              P type MOSfet model                     |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos6 - model parameters (input-output)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| vto               Threshold voltage                       |
TEXT: H| vt0               (null)                                  |
TEXT: H| kv                Saturation voltage factor               |
TEXT: H| nv                Saturation voltage coeff.               |
TEXT: H ------------------------------------------------------------
TEXT: H| kc                Saturation current factor               |
TEXT: H| nc                Saturation current coeff.               |
TEXT: H| nvth              Threshold voltage coeff.                |
TEXT: H| ps                Sat. current modification  par.         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gamma             Bulk threshold parameter                |
TEXT: H| gamma1            Bulk threshold parameter 1              |
TEXT: H| sigma             Static feedback effect par.             |
TEXT: H| phi               Surface potential                       |
TEXT: H ------------------------------------------------------------
TEXT: H| lambda            Channel length modulation param.        |
TEXT: H| lambda0           Channel length modulation param. 0      |
TEXT: H| lambda1           Channel length modulation param. 1      |
TEXT: H| rd                Drain ohmic resistance                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rs                Source ohmic resistance                 |
TEXT: H| cbd               B-D junction capacitance                |
TEXT: H| cbs               B-S junction capacitance                |
TEXT: H| is                Bulk junction sat. current              |
TEXT: H ------------------------------------------------------------
TEXT: H| pb                Bulk junction potential                 |
TEXT: H| cgso              Gate-source overlap cap.                |
TEXT: H| cgdo              Gate-drain overlap cap.                 |
TEXT: H| cgbo              Gate-bulk overlap cap.                  |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| cj                Bottom junction cap per area            |
TEXT: H| mj                Bottom grading coefficient              |
TEXT: H| cjsw              Side junction cap per area              |
TEXT: H ------------------------------------------------------------
TEXT: H| mjsw              Side grading coefficient                |
TEXT: H| js                Bulk jct. sat. current density          |
TEXT: H| ld                Lateral diffusion                       |
TEXT: H| tox               Oxide thickness                         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| u0                Surface mobility                        |
TEXT: H| uo                (null)                                  |
TEXT: H| fc                Forward bias jct. fit parm.             |
TEXT: H| tpg               Gate type                               |
TEXT: H ------------------------------------------------------------
TEXT: H| nsub              Substrate doping                        |
TEXT: H| nss               Surface state density                   |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|           Mos6 - model parameters (output-only)           |
TEXT: H|-----------------------------------------------------------+
TEXT: H| type              N-channel or P-channel MOS              |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Resistor
TITLE: Resistor:  Simple linear resistor
TEXT: H
TEXT: H _B._2_1.  _R_e_s_i_s_t_o_r:  _S_i_m_p_l_e _l_i_n_e_a_r _r_e_s_i_s_t_o_r
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Resistor - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| resistance        Resistance                              |
TEXT: H| temp              Instance operating temperature          |
TEXT: H| l                 Length                                  |
TEXT: H| w                 Width                                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Resistor - instance parameters (output-only)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| i                 Current                                 |
TEXT: H| p                 Power                                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Resistor - model parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| r                 Device is a resistor model              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Resistor - model parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rsh               Sheet resistance                        |
TEXT: H| narrow            Narrowing of resistor                   |
TEXT: H| tc1               First order temp. coefficient           |
TEXT: H| tc2               Second order temp. coefficient          |
TEXT: H| defw              Default device width                    |
TEXT: H| tnom              Parameter measurement temperature       |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Switch
TITLE: Switch:  Ideal voltage controlled switch
TEXT: H
TEXT: H _B._2_2.  _S_w_i_t_c_h:  _I_d_e_a_l _v_o_l_t_a_g_e _c_o_n_t_r_o_l_l_e_d _s_w_i_t_c_h
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Switch - instance parameters (input-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| on                Switch initially closed                 |
TEXT: H| off               Switch initially open                   |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Switch - instance parameters (input-output)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of switch                 |
TEXT: H| neg_node          Negative node of switch                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Switch - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| cont_p_node       Positive contr. node of switch          |
TEXT: H| cont_n_node       Positive contr. node of switch          |
TEXT: H| i                 Switch current                          |
TEXT: H| p                 Switch power                            |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Switch - model parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| sw                Switch model                            |
TEXT: H| vt                Threshold voltage                       |
TEXT: H| vh                Hysteresis voltage                      |
TEXT: H| ron               Resistance when closed                  |
TEXT: H| roff              Resistance when open                    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          Switch - model parameters (output-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gon               Conductance when closed                 |
TEXT: H| goff              Conductance when open                   |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Tranline
TITLE: Tranline:  Lossless transmission line
TEXT: H
TEXT: H _B._2_3.  _T_r_a_n_l_i_n_e:  _L_o_s_s_l_e_s_s _t_r_a_n_s_m_i_s_s_i_o_n _l_i_n_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Tranline - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition vector:v1,i1,v2,i2    |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|       Tranline - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| z0                Characteristic impedance                |
TEXT: H| zo                (null)                                  |
TEXT: H| f                 Frequency                               |
TEXT: H| td                Transmission delay                      |
TEXT: H ------------------------------------------------------------
TEXT: H| nl                Normalized length at frequency given    |
TEXT: H| v1                Initial voltage at end 1                |
TEXT: H| v2                Initial voltage at end 2                |
TEXT: H| i1                Initial current at end 1                |
TEXT: H| i2                Initial current at end 2                |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Tranline - instance parameters (output-only)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| rel               Rel. rate of change of deriv. for bkpt  |
TEXT: H| abs               Abs. rate of change of deriv. for bkpt  |
TEXT: H| pos_node1         Positive node of end 1 of t. line       |
TEXT: H| neg_node1         Negative node of end 1 of t. line       |
TEXT: H ------------------------------------------------------------
TEXT: H| pos_node2         Positive node of end 2 of t. line       |
TEXT: H| neg_node2         Negative node of end 2 of t. line       |
TEXT: H| delays            Delayed values of excitation            |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: VCCS
TITLE: VCCS:  Voltage controlled current source
TEXT: H
TEXT: H _B._2_4.  _V_C_C_S:  _V_o_l_t_a_g_e _c_o_n_t_r_o_l_l_e_d _c_u_r_r_e_n_t _s_o_u_r_c_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCCS - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         VCCS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Transconductance of source (gain)       |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCCS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| cont_p_node       Positive node of contr. source          |
TEXT: H| cont_n_node       Negative node of contr. source          |
TEXT: H ------------------------------------------------------------
TEXT: H| i                 Output current                          |
TEXT: H| v                 Voltage across output                   |
TEXT: H| p                 Power                                   |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: VCVS
TITLE: VCVS:  Voltage controlled voltage source
TEXT: H
TEXT: H _B._2_5.  _V_C_V_S:  _V_o_l_t_a_g_e _c_o_n_t_r_o_l_l_e_d _v_o_l_t_a_g_e _s_o_u_r_c_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCVS - instance parameters (input-only)          |
TEXT: H|-----------------------------------------------------------+
TEXT: H| ic                Initial condition of controlling source |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         VCVS - instance parameters (input-output)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| gain              Voltage gain                            |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|          VCVS - instance parameters (output-only)         |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| cont_p_node       Positive node of contr. source          |
TEXT: H  cont_n_node       Negative node of contr. source
TEXT: H ------------------------------------------------------------
TEXT: H| i                 Output current                          |
TEXT: H| v                 Output voltage                          |
TEXT: H| p                 Power                                   |
TEXT: H ------------------------------------------------------------
TEXT: H

SUBJECT: Vsource
TITLE: Vsource:  Independent voltage source
TEXT: H
TEXT: H _B._2_6.  _V_s_o_u_r_c_e:  _I_n_d_e_p_e_n_d_e_n_t _v_o_l_t_a_g_e _s_o_u_r_c_e
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|         Vsource - instance parameters (input-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pulse             Pulse description                       |
TEXT: H| sine              Sinusoidal source description           |
TEXT: H| sin               Sinusoidal source description           |
TEXT: H| exp               Exponential source description          |
TEXT: H ------------------------------------------------------------
TEXT: H| pwl               Piecewise linear description            |
TEXT: H| sffm              Single freq. FM descripton              |
TEXT: H| ac                AC magnitude, phase vector              |
TEXT: H| distof1           f1 input for distortion                 |
TEXT: H| distof2           f2 input for distortion                 |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Vsource - instance parameters (input-output)       |
TEXT: H|-----------------------------------------------------------+
TEXT: H| dc                D.C. source value                       |
TEXT: H| acmag             A.C. Magnitude                          |
TEXT: H| acphase           A.C. Phase                              |
TEXT: H ------------------------------------------------------------
TEXT: H
TEXT: H 
TEXT: H ------------------------------------------------------------
TEXT: H|        Vsource - instance parameters (output-only)        |
TEXT: H|-----------------------------------------------------------+
TEXT: H| pos_node          Positive node of source                 |
TEXT: H| neg_node          Negative node of source                 |
TEXT: H| function          Function of the source                  |
TEXT: H| order             Order of the source function            |
TEXT: H ------------------------------------------------------------
TEXT: H| coeffs            Coefficients for the function           |
TEXT: H| acreal            AC real part                            |
TEXT: H| acimag            AC imaginary part                       |
TEXT: H| i                 Voltage source current                  |
TEXT: H| p                 Instantaneous power                     |
TEXT: H ------------------------------------------------------------

